Hostname: page-component-76d6cb85b7-rxvq6 Total loading time: 0 Render date: 2026-07-19T05:15:21.768Z Has data issue: false hasContentIssue false
  • English
  • Français

Dry Techniques for Epitaxial Graphene Transfer

Published online by Cambridge University Press:  01 February 2011

Joshua D. Caldwell ,
Travis J. Anderson ,
Karl D. Hobart ,
Glenn G. Jernigan ,
James C. Culbertson ,
Fritz J. Kub ,
Joseph L. Tedesco ,
Jennifer K. Hite ,
Michael A. Mastro  and
Rachael L. Myers-Ward
...Show all authors
Joshua D. Caldwell
Affiliation:
joshua.caldwell@nrl.navy.milpchemdork@gmail.com, Naval Research Lab, Washington, District of Columbia, United States
Travis J. Anderson
Affiliation:
travis.anderson@nrl.navy.mil, Naval Research Lab, Washington, District of Columbia, United States
Karl D. Hobart
Affiliation:
karl.hobart@nrl.navy.mil, Naval Research Lab, Washington, District of Columbia, United States
Glenn G. Jernigan
Affiliation:
glenn.jernigan@nrl.navy.mil, United States
James C. Culbertson
Affiliation:
james.culbertson@nrl.navy.mil, Naval Research Lab, Washington, District of Columbia, United States
Fritz J. Kub
Affiliation:
kub@nrl.navy.mil, Naval Research Lab, Washington, District of Columbia, United States
Joseph L. Tedesco
Affiliation:
joseph.tedesco@nist.gov, Naval Research Lab, Washington, District of Columbia, United States
Jennifer K. Hite
Affiliation:
hite@ccs.nrl.navy.mil, Naval Research Lab, Washington, District of Columbia, United States
Michael A. Mastro
Affiliation:
michael.mastro@nrl.navy.mil, Naval Research Lab, Washington, District of Columbia, United States
Rachael L. Myers-Ward
Affiliation:
rachael.myers-ward@nrl.navy.mil
Charles R. Eddy
Affiliation:
chip.eddy@nrl.navy.mil, United States
Paul M. Campbell
Affiliation:
paul.campbell@nrl.navay.mil, Naval Research Lab, Washington, District of Columbia, United States
D. Kurt Gaskill
Affiliation:
kurt.gaskill@nrl.navy.mil, Naval Research Lab, Washington, District of Columbia, United States
Get access

Abstract

Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.

Keywords

Cdevicesbonding

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1259: Symposium S – Graphene Materials and Devices , 2010 , 1259-S18-05
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Zhang, Y., Dubonos, S.V., Grigorieva, I.V., and Firsov, A.A., Science 306 (5696), 666–669 (2004).Google Scholar
2 Wang, X., Linjie, Z., and Mullen, K., Nano Lett. 8 (1), 323–327 (2008).Google Scholar
3 Lee, C., Wei, X., Kysar, J.W., and Hone, J., Science 321, 385 (2008).Google Scholar
4 Berger, C., Song, Z.M., Li, T.B., Li, X.B., Ogbazghi, A.Y., Feng, R., Dai, Z.T., Marchenkov, A.N., Conrad, E.H., First, P.N., and Heer, W.A. de, J. Phys. Chem. B 108 (52), 19912–19916 (2004).Google Scholar
5 Jernigan, G.G., vanMil, B.L., Tedesco, J.L., Tischler, J.G., Glaser, E.R., Davidson, A., Campbell, P.M., and Gaskill, D.K., Nano Lett. 9 (7), 2605–2609 (2009).Google Scholar
6 Tedesco, J.L., vanMil, B.L., Myers-Ward, R.L., McCrate, J.M., Kitt, S.A., Campbell, P.M., Jernigan, G.G., Culbertson, J.C., Eddy, C.R., and Gaskill, D.K., Appl. Phys. Lett. 95 (12), 122102 (2009).Google Scholar
7 Bae, S., Kim, H.K., Lee, Y., Xu, X., Park, J.-S., Zheng, Y., Balakrishnan, J., Im, D., Lei, T., Song, Y.I., Kim, J., Kim, S.K., Ozyilmaz, B., Ahn, J.-H., Hong, B.H., and Iijima, S., ArXiv 0912:5485 (2010).Google Scholar
8 Niklaus, F., Enoksson, P., Kalvesten, E., and Stemme, G., in 13th Annual Int. Conf. on Micro Electro Mechanical Systems (Miyazaki, Japan, 2000), p. 247.Google Scholar
9 Tuinstra, F. and Koenig, J.L., J. Chem. Phys. 53 (3), 1126–1130 (1970).Google Scholar
10 Shivaraman, S., Chandrashekhar, M., Boeckl, J.J., and Spencer, M.G., J. Electron. Mater. 38 (6), 725–730 (2009).Google Scholar
11 Glembocki, O.J., Caldwell, J. D., Mittereder, J.A., Calame, J.P., Binari, S.C., and Stahlbush, R. E., Mater. Sci. Forum 600–603, 1111–1114 (2009).Google Scholar
12 Mas-Torrent, M. and Rovira, C., Chem. Soc. Rev. 37 (4), 827–838 (2008).Google Scholar