Hostname: page-component-76d6cb85b7-f97m6 Total loading time: 0 Render date: 2026-07-12T08:41:08.258Z Has data issue: false hasContentIssue false
  • English
  • Français

A Low-Range Drift-Free Bio-compatible Pressure Sensor Based on P(VDF-TrFE) Piezoelectric Thin Film

Published online by Cambridge University Press:  31 January 2011

Xiaoyang Li ,
Timothy Reissman ,
Fan Yu  and
Edwin C. Kan
Xiaoyang Li
Affiliation:
xl99@cornell.edu, Cornell University, Electrical and Computer Engineering, ITHACA, New York, United States
Timothy Reissman
Affiliation:
tr34@cornell.edu, Cornell University, Mechanical and Aerospace Engineering, ITHACA, New York, United States
Fan Yu
Affiliation:
fy34@cornell.edu, Cornell University, Electrical and Computer Engineering, ITHACA, New York, United States
Edwin C. Kan
Affiliation:
kan@ece.cornell.edu, Cornell University, Electrical and Computer Engineering, ITHACA, New York, United States
Get access

Abstract

A low-range pressure sensor (0-100kPa) based on the P(VDF-TrFE) piezoelectric thin film is proposed, where the long-term drift is eliminated by operating near the piezoelectric resonance. The pressure sensor is designed for blood pressure and tissue swelling pressure monitoring. The poled 50μm±1μm P(VDF-TrFE) copolymer film is used as the sensing element, with all fabrication and assembly materials biocompatible. A modified Butterworth-Van Dyke (BVD) [1] equivalent circuit model is used to characterize the sensor behavior. The pressure sensor exhibits negligible drift in weeks of operation. The device shows a sensitivity of 0.038MHz/kPa resonance frequency shift under stress, which leads to a maximum readout change of 1.1%/kPa in the present setup.

Keywords

sensorpiezoelectricacoustic

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1222: Symposium DD – Microelectromechanical Systems — Materials and Devices III , 2009 , 1222-DD05-29
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Dyke, K. S. Van, “The piezoelectric resonator and its equivalent network,” Proc. IRE, 16, pp. 742–764 (1928).Google Scholar
2 Park, K.T. Klafter, R.D. and Bloomefield, P.E. “A charge readout algorithm for piezoelectric force transducers,” Intl. Symp. Applications of Ferroelectrics, 1986, p. 715.Google Scholar
3 Martin, S. J. Granstaff, V. E. and Frye, G. C. “Characterization of a quartz crystal microbalance with simultaneous mass and liquid loading,” Anal. Chem. 63, pp. 2272–2281 (1991).Google Scholar
4 Reed, C. E. Kanazawa, K. K. and Kaufman, J. H. “Physical description of a viscoelastically loaded AT-cut quartz resonator,” J. Appl. Phys. 68 (5), pp. 1993–2001 (1990).Google Scholar
5 Chen, P. and Wu, L. “The equivalent circuit of an AT-cut quartz resonator and its application,” Jpn. J. Appl. Phys. 39, pp. 2710–2713 (2000).Google Scholar
6 Jacquot, B. C. Lee, C. Shen, Y. N. and Kan, E. C. “Time-resolved ion and molecule transport sensing with microfluidic integration by chemoreceptive neuron MOS transistors (CíMOS),” Proc. IEEE Sensors, 2005, pp. 101–104.Google Scholar
7 Jacquot, B. C. Munoz, N. and Kan, E. C. “Thermal and pressure sensing by chemoreceptive neuron MOS transistors (CìMOS) with PVDF coating,” Mater. Res. Soc. Symp. Proc., 952 (2007).Google Scholar
8 Ngalamou, L. Noury, N. Chamberod, E. and Benech, Ph., “Analysis of the sensitivity and the temperature influence of a static force sensor based on a PVDF resonator,” Sensors and Actuators A57, pp. 173–177 (1996).Google Scholar