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Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates
Published online by Cambridge University Press: 01 February 2011
Abstract
In this work, we study cubic SiC/Si (111) templates as an alternative for growing GaN on silicon. We first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. Then, AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these templates. Both the structural quality and the behavior of transistors realized on these structures show the feasibility of this approach.
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- Copyright © Materials Research Society 2008
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