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Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

Published online by Cambridge University Press:  01 February 2011

Yvon Cordier ,
Marc Portail ,
Sébastien Chenot ,
Olivier Tottereau ,
Marcin Zielinski  and
Thierry Chassagne
Yvon Cordier
Affiliation:
yc@crhea.cnrs.fr, CNRS, CRHEA, rue B. Gregory, Sophia Antipolis, Valbonne, 06560, France, +33 4 93 95 42 00, +33 4 93 95 83 61
Marc Portail
Affiliation:
mpo@crhea.cnrs.fr, CNRS-CRHEA, rue Bernard Gregory, Sophia Antipolis, Valbonne, 06560, France
Sébastien Chenot
Affiliation:
sc@crhea.cnrs.fr, CNRS-CRHEA, rue Bernard Gregory, Sophia Antipolis, Valbonne, 06560, France
Olivier Tottereau
Affiliation:
ot@crhea.cnrs.fr, CNRS-CRHEA, rue Bernard Gregory, Sophia Antipolis, Valbonne, 06560, France
Marcin Zielinski
Affiliation:
mz@crhea.cnrs.fr, Novasic, Savoie Technolac, Arche Bât. 4, BP 267, Le Bourget du Lac, 73375, France
Thierry Chassagne
Affiliation:
tc@crhea.cnrs.fr, Novasic, Savoie Technolac, Arche Bât. 4, BP 267, Le Bourget du Lac, 73375, France
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Abstract

In this work, we study cubic SiC/Si (111) templates as an alternative for growing GaN on silicon. We first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. Then, AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these templates. Both the structural quality and the behavior of transistors realized on these structures show the feasibility of this approach.

Keywords

III-Vmolecular beam epitaxy (MBE)Si

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References

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