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The Future Of Silicide For CMOS Contacts

Published online by Cambridge University Press:  10 February 2011

R. A. Roy ,
C. Cabral Jr  and
C. Lavoie
R. A. Roy
Affiliation:
IBM Research Division P.O. Box 218 Yorktown Heights NY 10598
C. Cabral Jr
Affiliation:
IBM Research Division P.O. Box 218 Yorktown Heights NY 10598
C. Lavoie
Affiliation:
IBM Research Division P.O. Box 218 Yorktown Heights NY 10598
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Abstract

This paper examines the challenges for silicide contacts in current and future CMOS technologies and assesses the capability of TiSi2 and related materials, as well as CoSi2, to meet the technology requirements. Specific issues such as maintaining low resistance in narrow lines, source/drain silicon consumption, and silicide thermal budget, are discussed. In this regard we evaluate the salient features of the basic titanium salicide process, and variations such as alloying, implantation, selective CVD, and laser silicidation. Data are presented from recent experiments to assess progress in each approach towards meeting the necessary goals. Finally, projections of the future of silicide processing are given.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 35
Copyright
Copyright © Materials Research Society 1999

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