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In-Situ Characterization of the Surface State Density by Photoluminescence During Electrochemical Treatments of Silicon Surfaces

Published online by Cambridge University Press:  10 February 2011

T. Dittrich ,
V. Y. Timoshenko  and
J. Rappich
T. Dittrich
Affiliation:
Technische Universität München, Physik Department E16, D-85747 Garching, Germany
V. Y. Timoshenko
Affiliation:
Physics Department, Moscow State University, 119899 Moscow, Russia
J. Rappich
Affiliation:
Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
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Abstract

The photoluminescence (PL) of c-Si is probed stroboscopically with single pulses of a N2 laser during electrochemical treatments (hydrogenation and anodic oxidation). The PL intensity of indirect semiconductors such as Si is controlled by the non-radiative surface and bulk recombination. By this reason the density of surface states can be estimated for unknown surfaces by using a calibrated standard. The surface state density of a hydrogenated Si surface increases by exchanging the electrolyte by gaseous N2 or water.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 203
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Yablonovich, E., Aliara, D. L., Chang, C. C., Gmitter, T., and Bright, T. B., Phys. Rev. Lett. 27, 249 (1986).Google Scholar
2. Oskam, G., Hoffmann, P. M., and Searson, P. C., Phys. Rev. Lett. 76, 1521 (1996).Google Scholar
3. Lam, Y. W., J. Phys. D: Appl. Phys. 12, 927 (1971).Google Scholar
4. Heilig, K., Flietner, H., and Reineke, J., J. Phys. D: Appl. Phys. 12, 927 (1979).Google Scholar
5. Dittrich, Th., Angermann, H., Flietner, H., Bitzer, Th., and Lewerenz, H. J., J. Electrochem. Soc. 141, 3595 (1994).Google Scholar
6. Rauscher, S., Dittrich, Th., Aggour, M., Rappich, J., Flietner, H., and Lewerenz, H. J., Appl. Phys. Lett. 66, 3018(1995).Google Scholar
7. Konishi, T., Yao, T., Tajima, M., Oshima, H., Ito, H., and Hattori, T., Jap. J. Appl. Phys. 31, L1216 (1992).Google Scholar
8. Rappich, J., Timoshenko, V. Yu., Dittrich, Th., J. Electrochem. Soc., in press.Google Scholar
9. Genscher, H., and Lübke, M., Ber. Bunsenges. Phys. Chem. 92, 573 (1988).Google Scholar
10. Ozanam, F., Chazalviel, J.-N., Radi, A., and Etman, M., Ber. Bunsenges. Phys. Chem. 95, 98 (1991).Google Scholar
11. Blackwood, D. J., Borazio, A., Greef, R., Peter, L. M., and Stumper, J., Electrochim. Acta 37, 882 (1992).Google Scholar
12. Rappich, J., Timoshenko, V. Yu., Dittrich, Th., Ber. Bunsenges. Phys. Chem., in press.Google Scholar
13. Flietner, H. in 7th Conf. Insulating Films on Semiconductors (INFOS) ed. By Eccleston, W. and Uren, M. (Hilger, Bristol 1991), p. 151–154 Google Scholar
14. Dittrich, Th., Rauscher, S., Bitzer, Th., Aggour, M., Flietner, H., and Lewerenz, H. J., J. Electrochem. Soc. 142, 2411 (1995).Google Scholar