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A Model for the Etching of Ti and Tin in SC-1 Solutions

Published online by Cambridge University Press:  10 February 2011

Steven Verhaverbeke  and
Jennifer W. Parker
Steven Verhaverbeke
Affiliation:
CFM Technologies, 1336 Enterprise Drive, West Chester, PA 19380
Jennifer W. Parker
Affiliation:
CFM Technologies, 1336 Enterprise Drive, West Chester, PA 19380
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Abstract

The Standard Clean 1 (SC-1), developed by W. Kern and D. Puotinen in 1965 and disclosed in 1970 [1], consists of a mixture of ammonium-hydroxide, hydrogen-peroxide, and water. (SC-1 is also called the Airfmonium-Hydroxide Peroxide Mixture or APM). Originally, this chemical mixture was developed for cleaning silicon wafers and it has proven to be the most efficient particle removing agent found to date. SC-1 can, however, also be used for etching. SC-1 will etch the following materials: SiO2, Si3N4, Si, Ti and TiN. On top of this, SC-1 will grow an oxide on several materials (i.e., bare silicon).

In this paper, a quantitative model for the SC-1 solution is presented. The etching of Ti and TiN is shown to be fundamentally different from the etching of SiO2. The mixture of Ammonium-hydroxide and Hydrogen Peroxide must be optimized differently for Ti and TiN etching than for the particle removal from Silicon wafers.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 447
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Kem, W. and Puotinen, D., RCA Rev. 31, 187 (1970).Google Scholar
2. Watanabe, M., Harazono, M., Hiratsuka, Y. and Edamura, T., “Etching Rates of SiO2 and Si3N4 Insulating Films in Ammonia Hydrogen-Peroxide Cleaning Process,” ECS Symposium on Silicon Nitride Thin Insulating Films, in Proceedings of the Electrochemical Society, (The Electrochemical Society, 488, Pennington, NJ, 1983), pp. 83–8.Google Scholar
3. O'Brien, S., Goldwasser, I., and Prinslow, D., “Wet Metal Strip After TiSi2 Formation,” in Proceedings of the Third International Symposium on Ultra Clean Processing of Silicon Surfaces, (ACCO, Leuven, Belgium, 1996), p. 205.Google Scholar
4. Philipossian, A. and Magana, J., “TiN etch rate and H202 decomposition studies in the H202/NH4OH/H20 system,” in Proceedings of the Second International Symposium on Ultra Clean Processing of Silicon Surfaces, (ACCO, Leuven, Belgium, 1994), p. 275.Google Scholar
5. Litvinenko, V.A., Ukrain Khim Zhur 32 1160.Google Scholar
6. Vasilyev, V. P. and Vorobjev, P.N., Zhur analit Khim 22 718Google Scholar
7. Vasilyev, V. P. and Vorobjev, P.N., Zhur Fiz Khim 44 1181 (E:657)Google Scholar
8. Pourbaix, M. adn De Zoubov, N., Atlas of Electrochemical Equilibria in Aqueous Solutions (NACE, Houston, TX, 1974), p. 501.Google Scholar
9. Verhaverbeke, S., Parker, J. W. and McConnell, C.F., “Quantitative Model for the SC-I Cleaning,” in Cleaning Technology in Semiconductor Device Manufacturing, (ECS, Pennington, NJ, 1996), p. 39.Google Scholar
10. Perrin, D.D., Ionisation constants of Inorganic Acids and Gases in Aqueous Solutions, IUPAC Chemical Data Series No. 29., Pergamon Press, N.Y., 1982.Google Scholar