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Fermi-Level Effect, Electric Field Effect, and Diffusion Mechanisms in GaAs Based III-V Compound Semiconductors

Published online by Cambridge University Press:  10 February 2011

T. Y. Tan ,
C.-H. Chen ,
U. Gösele  and
R. Scholz
T. Y. Tan
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708-0300
C.-H. Chen
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708-0300
U. Gösele
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708-0300 Max-Planck-Institut für Mikrostructurphysik, Weinberg 2, 06120 Halle/Saale, Germany
R. Scholz
Affiliation:
Max-Planck-Institut für Mikrostructurphysik, Weinberg 2, 06120 Halle/Saale, Germany
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Abstract

Diffusion mechanisms and point defects in GaAs and related III-V compounds are discussed. An understanding of the As sublattice situation has been arrived at fairly recently and is presently tentative. Understanding of the Ga sublattice situation has become more acceptable in that experimental results are consistently explained by the Fermi-level effect and the As4 pressure effect. On the Ga sublattice, though controversies still exist, some are readily resolved by noting the role of the electric field produced by semiconductor electrical junctions, physical junctions, and surfaces.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 321
Copyright
Copyright © Materials Research Society 1998

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References

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