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Theory of Point Defects and Complexes in GaN

Published online by Cambridge University Press:  21 February 2011

Jörg Neugebauer  and
Chris G. Van de Walle
Jörg Neugebauer
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
Chris G. Van de Walle
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
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Abstract

We have studied the electronic and energetic properties of native defects, impurities and complexes in GaN applying state-of-the-art first-principles calculations. An analysis of the numerical results gives direct insight into defect concentrations and impurity solubility with respect to growth parameters (temperature, chemical potentials) and into the mechanisms limiting the doping levels in GaN. We show how compensation and passivation by native defects or impurities, solubility issues, and incorporation of dopants on other sites influence the acceptor doping levels. The role of hydrogen in enhancing the p-type doping is explained in detail. We also discuss the mechanisms responsible for the experimentally observed limitation of the free-carrier concentration in p-type GaN.

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References

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