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Free Carrier Lifetime in a-Si,Ge:H Alloys

Published online by Cambridge University Press:  21 February 2011

D.A. Young ,
P.M. Fauchek ,
Y.M. Liu ,
W.L. Nighan Jr  and
C.M. Fortmann
D.A. Young
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
P.M. Fauchek
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
Y.M. Liu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
W.L. Nighan Jr
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
C.M. Fortmann
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark DE 19716
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Abstract

The lifetime of carriers injected optically in the extended states of amorphous silicon-germanium alloys has been measured by time-resolved pump and probe optical techniques using either a femtosecond dye laser or a picosecond free electron laser. When Ninj > 1018 cm-3, the lifetime of the carriers is in the picosecond time domain. Our results are comparable to what we have observed previously in a-Si:H and very recently in a-Si,C:H. There are two lifetime regimes: at high densities, the recombination is bimolecular and nonradiative, whereas at lower densities, the recombination tends to be monomolecular but still nonradiative. The origin of these lifetimes is discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 807
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Fauchet, P.M., Hulin, D., Migus, A., Antonetti, A., Kolodzey, J. and Wagner, S., Phys. Rev. Lett. 57, 2438 (1986)Google Scholar
2. Fauchet, P.M., Mourchid, A., Hulin, D., Tanguy, C. and Vanderhaghen, R., J. Non-Cryst. Solids 114, 564 (1989);CrossRefGoogle Scholar
Mourchid, A., Hulin, D., Tanguy, C., Vanderhaghen, R., Nighan, W.L. Jr, Gzara, K. and Fauchet, P.M., Solid State Commun. 74, 1197 (1990)CrossRefGoogle Scholar
3. Hulin, D., Mourchid, A., Fauchet, P.M., Nighan, W.L. Jr, and Vanderhaghen, R., J. Non-Cryst. Solids 137&138, 527 (1991)Google Scholar
4. Mourchid, A., Vanderhaghen, R., Hulin, D. and Fauchet, P.M., Phys. Rev. B42, 7667 (1990)CrossRefGoogle Scholar
5. Mourchid, A., Hulin, D., Tanguy, C., Vanderhaghen, R. and Fauchet, P.M., J. Non-Cryst. Solids 114, 582 (1989)Google Scholar
6. Vanderhaghen, R., Mourchid, A., Hulin, D., Young, D.A., Nighan, W.L. Jr, and Fauchet, P.M., J. Non-Cryst. Solids 137&138, 543 (1991)CrossRefGoogle Scholar
7. Mourchid, A., Ph.D. Thesis, Universite de Paris-Sud (1990)Google Scholar
8. Fauchet, P.M., Vanderhaghen, R., Mourchid, A. and Hulin, D., “The extended state mobility in amorphous silicon alloys”, Mat. Res. Soc. Symp. Proc. Vol. 258 (1992). this volumeGoogle Scholar
9. Tanguy, C., Hulin, D., Mourchid, A., Fauchet, P.M. and Wagner, S., Appl. Phys. Lett. 53, 880 (1988)CrossRefGoogle Scholar
10. Fauchet, P.M. and Hulin, D., J. Opt. Soc. Am. B6, 1024 (1989)Google Scholar
11. Tiedje, T., in Semiconductors and Semimetals Volume 21 C. Hvdrogenated Amorphous Silicon- Electronic and Transport Properties, ed. Pankove, J.I. (Academic, Orlando, 1984), Chapter 6Google Scholar
12. Albright, D.E., Fortmann, C.M. and Russell, T.W.F., Mat. Res. Soc. Symp. Proc. Vol. 149, 521 (1989)Google Scholar
13. Fortmann, C.M., Albright, D.E., Campbell, I.H. and Fauchet, P.M., Mat. Res. Soc. Symp. Proc. Vol. 164, 315 (1990)CrossRefGoogle Scholar
14. Fortmann, C.M., Hegedus, S.S. and Buchanan, W.A., J. Non-Cryst. Solids 115, 21 (1989)Google Scholar
15. Fauchet, P.M., Young, D.A., Nighan, W.L. Jr and Fortmann, C.M., IEEE J. Quant. Electron. OE-27, 2714 (1991)CrossRefGoogle Scholar
16. Fauchet, P.M., “Picosecond spectroscopy in solids with a free-electron laser” in Spectroscopie Characterization Techniques for Semiconductor Technology IV, ed. Glembocki, O.J. (SPIE, Bellingham, WA, 1992), Vol. 1678, in pressGoogle Scholar
17. Fauchet, P.M., Hulin, D., Vanderhaghen, R., Mourchid, A. and Nighan, W.L. Jr, J. Non-Cryst. Solids 141, 76 (1992)Google Scholar
18. Unold, T., Cohen, J.D. and Fortmann, C.M., J. Non-Cryst. Solids 137&138, 809 (1991)Google Scholar
19. Unold, T., Cohen, J.D. and Fortmann, C.M., “Effect of light-soaking on the density of states and carrier dynamics of a-Si1-xGex:H alloys”, Mat. Res. Soc. Symp. Proc. Vol. 258 (1992), this volumeGoogle Scholar