Hostname: page-component-76d6cb85b7-jhrpq Total loading time: 0 Render date: 2026-07-15T10:39:25.793Z Has data issue: false hasContentIssue false
  • English
  • Français

Fundamental Aspects of High Speed Crystal Growth from theMelt

Published online by Cambridge University Press:  25 February 2011

A.G. Cullis
A.G. Cullis*
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs. WR14 3PS, England
Get access

Abstract

Advances in the study of high speed crystal growth from the melt arereviewed, with special emphasis on the fast melting and solidification ofsilicon achieved by use of Q-switched laser radiation pulses. Rapid meltingof amorphous Si is confirmed to yield a liquid undercooled by severalhundred Kelvins and, under suitable conditions, explosive crystal growthprocesses can occur. The latter involve the self-sustaining propagation ofmelt bands buried within the initially amorphous material. When the highestquench-rate conditions are established melting of even crystalline Si canyield a final amorphous solid phase. This breakdown in crystal growth isorientation dependent and can give regimes of crystal defect formation whenamor-phization does not take place. The processes which characterize thislimiting growth behaviour are discussed.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Thompson, M.O., Galvin, G.J., Mayer, J.W., Peercy, P.S., Poate, J.M., Jacobson, D.C., Cullis, A.G. and Chew, N.G., Phys. Rev. Lett. 52, 2360 (1984).Google Scholar
2. Cullis, A.G., Chew, N.G., Webber, H.C. and Smith, D.J., J. Crystal Growth 68, 624 (1984).Google Scholar
3. Gore, G., Phil. Mag. 9, 73 (1855).Google Scholar
4. Gold, R.B., Gibbons, J.F., Magee, T.J., Peng, J., Ormond, R., Deline, V.R. and Evans, C.A. Jr., in Laser and Electron Beam Processing of Materials, edited by White, C.W. and Peercy, P.S. (Academic Press, New York, 1980) pp. 221–226.Google Scholar
5. Zeiger, H.J., Fan, J.C.C., Palm, B.J., Gale, R.P. and Chapman, R.L., in Laser and Electron Beam Processing of Materials, edited by White, C.W. and Peercy, P.S. (Academic Press, New York, 1980) pp. 234–240.Google Scholar
6. Gilmer, G.H. and Leamy, H.J., in Laser and Electron Beam Processing of Materials, edited by White, C.W. and Peercy, P.S. (Academic Press, New York, 1980) pp. 227–233.Google Scholar
7. Leamy, H.J., Brown, W.L.. Celler, G.K., Foti, G., Gilmer, G.H. and Fan, J.C.C., Appl. Phys. Lett. 38, 137 (1981).Google Scholar
8. Lemons, R.A. and Bösch, M.A., Appl. Phys. Lett. 39, 343 (1981).Google Scholar
9. Auvert, G., Bensahel, D., Perio, A., Nguyen, V.T. and Rozgonyi, G.A., Appl. Phys. Lett. 39, 724 (1981).Google Scholar
10. Bertolotti, M., Vitali, G., Rimini, E. and Foti, G., J. Appl. Phys. 50, 259 (1979).Google Scholar
11. Cullis, A.G., Webber, H.C. and Chew, N.G., Appl. Phys. Lett. 36, 547 (1980).Google Scholar
12. Narayan, J. and White, C.W., Appl. Phys. Lett. 44, 35 (1984).Google Scholar
13. Wood, R.F., Lowndes, D.H. and Narayan, J., Appl. Phys. Lett. 44, 770 (1984).Google Scholar
14. Sinke, W. and Saris, F.W., this proceedings volume.Google Scholar
15. Baeri, P., Foti, G., Poate, J.M. and Cullis, A.G., Phys. Rev. Lett. 45, 2036 (1980).Google Scholar
16. Webber, H.C., Cullis, A.G. and Chew, N.G., Appl. Phys. Lett. 43, 669 (1983).Google Scholar
17. Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M. and Jacobson, D.C., Appl. Phys. Lett. 42, 698 (1983).Google Scholar
18. Liu, P.L., Yen, R., Bloembergen, N. and Hodgson, R.T., Appl. Phys. Lett. 34, 864 (1979).Google Scholar
19. Tsu, R., Hodgson, R.T., Tan, T.Y. and Baglin, J.E., Phys. Rev. Lett. 42, 1356 (1979).Google Scholar
20. Cullis, A.G., Webber, H.C., Chew, N.G., Poate, J.M. and Baeri, P., Phys. Rev. Lett. 49, 219 (1982).Google Scholar
21. Thompson, M.O., Mayer, J.W., Cullis, A.G., Webber, H.C., Chew, N.G., Poate, J.M. and Jacobson, D.C., Phys. Rev. Lett. 50, 896 (1983).Google Scholar
22. Gilmer, G.H., in Laser-Solid Interactions and Transient Thermal Processing of Materials, edited by Narayan, J., Brown, W.L. and Lemons, R.A. (North-Holland, New York, 1983) pp. 249–261.Google Scholar
23. Wagner, R.S., Acta. Met. 8, 57 (1960).Google Scholar
24. John, H.F. and Faust, J.W. Jr., in Metallurgy of Elemental and Compound Semiconductors, edited by Grubel, R.O. (Interscience, New York, 1961) pp. 127–148.Google Scholar