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Characterization of B and N Implanted Fused Silica

Published online by Cambridge University Press:  25 February 2011

G. W. Arnold ,
R. K. Brow ,
M. J. Carr  and
J. C. Barbour
G. W. Arnold
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
R. K. Brow
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
M. J. Carr
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
J. C. Barbour
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
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Abstract

The implantation of B and N into fused silica can result in chemical incorporation into the glass with a consequent larger increase in refractive index than is possible due to volume compaction alone. B implantation produces anomalously large concentrations of oxygen-vacancy defects which aid in the establishment of B into a borosilicate layer. N implants can result in unreacted N accumulations in addition to N incorporated into a Si-oxynitride layer. The unreacted N can also be incorporated by implantation damage (e.g., Si, Ar, Kr)--before or after N implantation--which provides additional occupancy sites. These results are important with respect to the use of implantation-produced waveguides for optoelectronic devices.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 569
Copyright
Copyright © Materials Research Society 1990

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References

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