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In-Situ Transmission Electron Microscopy of the Formation of Metal-Semiconductor Contacts

Published online by Cambridge University Press:  25 February 2011

J. M. Gibson ,
D. Loretto  and
D. Cherns
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
D. Loretto
Affiliation:
now at Max Planck Institut fur Metallforschung, Seestrasse 92, D-7000, Stuttgart, FRG.
D. Cherns
Affiliation:
University of Bristol, H. H. Wills Physics Laboratory, Royal Fort, Tyndall Ave, Bristol BS8 1TL, U.K.
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Abstract

We have studied the formation of metal silicides in-situ in an ultra-high vacuum transmission electron microscope. Metals were deposited on in-situ cleaned, reconstructed silicon surfaces and annealed. For the metals Ni and Co, we find that the phase sequence in ultra-thin films is different from that seen in ≈1000 Å thick films, and attribute this to the high surface-to-volume ratio. In general reactions occur at room temperature, to form an epitaxial phase if possible. We report preliminary new results on the formation of Pd2Si.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 91
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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