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Pinning Action of a Thin Ga Interfacial Layer in an Sb/Ga/GaAs Schottky Barrier Structure Grown by MBE

Published online by Cambridge University Press:  26 February 2011

X.-J. Zhang ,
H. Cheng  and
A. G. Milnes
X.-J. Zhang
Affiliation:
Fudan University, Shanghai, China
H. Cheng
Affiliation:
Carnegie-Mellon University, Pittsburgh, PA 15213
A. G. Milnes
Affiliation:
Carnegie-Mellon University, Pittsburgh, PA 15213
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Abstract

The pinning action on the barrier height of a Ga interfacial layer in an Sb/Ga/GaAs structure prepared by molecular beam epitaxy has been tracked as a function of Ga layer thicknesses for both n and p-GaAs (100). The barrier height ÆBn for n-type GaAs (ND=3×1015cm−3), determined by thermal activation measurements and capacitance measurements, changes from 0.8 to 1.0 eV as the Ga layer is increased from zero to three monolayers. The barrier height ÆBp for p-type GaAs decreases in a converse fashion so that the sum ÆBn + ÆBp is equal to the GaAs energy gap. Up to a Ga layer thickness of about one monolayer the barrier height changes are about linearly proportional to thickness.

The action seen is compatible with barrier height changes that are seen when Sb/GaAs junctions are prepared with the original surface alternatively As or Ga rich and subjected to thermal annealing at temperatures up to 250°C.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 387
Copyright
Copyright © Materials Research Society 1985

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