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Studies of Organometallic Precursors to Aluminum Nitride

Published online by Cambridge University Press:  28 February 2011

Leonard V. Interrante
Affiliation:
Dept. of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
Leslie E. Carpenter II
Affiliation:
Dept. of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
Christopher Whitmarsh
Affiliation:
Dept. of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
Wei Lee
Affiliation:
Dept. of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
Mary Garbauskas
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301.
Glen A. Slack
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301.
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Abstract

The reaction of trialkylaluminum compounds with ammonia has been examined as a potential route to high purity AlN powder and to AlN thin films. This reaction proceeds in stages in which the initially formed Lewis acid/base adduct undergoes thermal decomposition to a series of intermediate alkylaluminum-amide and -imide species with increasing Al-N bonding, i.e.,

The structure and properties of several of these species have been studied using various physical and chemical methods, leading to a better understanding of the chemistry of this novel AlN precursor system. The structure of the intermediate organoaluminum amide, (CH3)2AlNH2, has been determined by single crystal X-ray diffraction methods and found to contain molecular trimer units with a six-membered Al-N ring structure similar to those which make up the wurzite structure of AlN. This compound is readily volatile and has been used to deposit AIN thin films on Si surfaces by a low-pressure CVD process. This approach has also been used to prepare AlN as a high surface area, high purity powder.

Type
Articles
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

(1) Gerlich, D., Dole, S. L., and Slack, G. A., GE CRD Report No. 84CRD244, Oct. 1984.Google Scholar
(2) Kuramoto, N. and Taniguchi, H., J. Mats. Sci. Ltrs., 3, 471 (1984)Google Scholar
(3) Slack, G. A. and McNelly, T. F., J. Cryst. Growth, 34, 263 (2976).Google Scholar
(4) Slack, G. A. and Bartram, S. F., J. Appl. Phys., 46, 89 (1975).Google Scholar
(5) Fathimulla, A. and Lakhani, A. A., J. Appl. Phys., 54, 4586 (1983).Google Scholar
(6) Pauleau, Y., Bouteville, A., Hantzpergue, J. J., Remy, J. C., and Cachard, A., J. Electrochem. Soc., 129, 1045 (1982).CrossRefGoogle Scholar
(7) Slack, G. A. and McNelly, T. F., J. Cryst. Growth, 42, 560 (1977).Google Scholar
(8) Slack, G. A., J. Phys. Chem. Solids, 34, 321 (1973).CrossRefGoogle Scholar
(9) Rabenau, A., Chapt. 19, in “Compound Semiconductors”, Vol.1, edited by Willardson, R. K. and Goering, H. L. (Reinhold Pub. Corp., New York, 1962, pp. 174176.Google Scholar
(10) Huesby, I., J. Amer. Ceram. Soc. 66, 217 (1983).CrossRefGoogle Scholar
(11) Manasevit, H. M., Erdman, F. M., and Simpson, W. I., J. Electrochem. Soc., 118, 1864 (1971).CrossRefGoogle Scholar
(12) Morita, M., Uesugi, N., Isogai, S., Tsubouchi, K., and Mikoshiba, N., Jap. J. Appl. Phys., 20, 17 (1981).CrossRefGoogle Scholar
(13) Rensch, U. and Eichhorn, G., Phys. Stat. Sol. (a), 77, 195 (1983).CrossRefGoogle Scholar
(14) Wiberg, E., in Bahr, G., FIAT Review of German Science, Vol.24, Inorganic Chemistry, Part 2, Klemm, W., ed. (1948), p. 155.Google Scholar
(15) Maeda, T. and Harada, K., Sumimoto Chem. Co. Ltd., Japan Kokai 78 68, 700, 19 June 1978, Appl. 76/145,137, 01 Dec 1976; Chem. Abs. 89, 165623f (1978).Google Scholar