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Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications

Published online by Cambridge University Press:  25 May 2012

A. Severino ,
M. Mauceri ,
R. Anzalone ,
A. Canino ,
N. Piluso ,
C. Vecchio ,
M. Camarda  and
F.La Via
A. Severino
Affiliation:
Epitaxial Technology Center, ETC srl, 16° strada, Blocco Torre Allegra, 95121, Catania, Italy CNR-IMM, sezione di Catania, VIII Strada 5, 95121, Catania, Italy
M. Mauceri
Affiliation:
Epitaxial Technology Center, ETC srl, 16° strada, Blocco Torre Allegra, 95121, Catania, Italy
R. Anzalone
Affiliation:
CNR-IMM, sezione di Catania, VIII Strada 5, 95121, Catania, Italy
A. Canino
Affiliation:
Epitaxial Technology Center, ETC srl, 16° strada, Blocco Torre Allegra, 95121, Catania, Italy CNR-IMM, sezione di Catania, VIII Strada 5, 95121, Catania, Italy
N. Piluso
Affiliation:
Epitaxial Technology Center, ETC srl, 16° strada, Blocco Torre Allegra, 95121, Catania, Italy CNR-IMM, sezione di Catania, VIII Strada 5, 95121, Catania, Italy
C. Vecchio
Affiliation:
Epitaxial Technology Center, ETC srl, 16° strada, Blocco Torre Allegra, 95121, Catania, Italy
M. Camarda
Affiliation:
Epitaxial Technology Center, ETC srl, 16° strada, Blocco Torre Allegra, 95121, Catania, Italy CNR-IMM, sezione di Catania, VIII Strada 5, 95121, Catania, Italy
F.La Via
Affiliation:
CNR-IMM, sezione di Catania, VIII Strada 5, 95121, Catania, Italy
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Abstract

3C-SiC is very attractive due the chance to be grown on large-area, low-cost Si substrates. Moreover, 3C-SiC has higher channel electron mobility with respect to 4H-SiC, interesting property in MOSFET applications. Other application fields where 3C-SiC can play a significant role are solar cells and MEMS-based sensors. In this work, we present a general overview of 3C-SiC growth on Si substrate. The influence of growth parameters, such as the growth rate, on the crystal quality of 3C-SiC films is discussed. The main issue for 3C-SiC development is the reduction of the stacking fault density, which shows an exponential decreasing trend with the film thickness tending to a saturation value of about 1000 cm-1. Some aspect of processing will be also faced with the realization of cantilever for Young modulus calculations and the implantation of Al ions for the study of damaging and recovery of the 3C-SiC crystal.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h05-01
Copyright
Copyright © Materials Research Society 2012

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