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  3. Extended Defects in Semiconductors
  • Cited by 77
      • D. B. Holt, Imperial College of Science, Technology and Medicine, London, B. G. Yacobi, University of Toronto
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    • Publisher:
      Cambridge University Press
      Publication date:
      September 2009
      April 2007
      ISBN:
      9780511534850
      9780521819343
      9781107424142
      DOI:
      https://doi.org/10.1017/CBO9780511534850
      Dimensions:
      (247 x 174 mm)
      Weight & Pages:
      1.428kg, 644 Pages
      Dimensions:
      (244 x 170 mm)
      Weight & Pages:
      1.01kg, 644 Pages
      • Subjects:
      Physics and Astronomy, Condensed Matter Physics, Nanoscience and Mesoscopic Physics, Engineering, Materials Science
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    • Selected: Digital
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    Subjects:
    Physics and Astronomy, Condensed Matter Physics, Nanoscience and Mesoscopic Physics, Engineering, Materials Science
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    Book description

    The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

    Reviews

    'This new book is … a welcome addition, covering as it does extended defects in semiconductors from the basics to the current state-of-the-art. … extremely readable with a clear, concise style. The presentation is classic, eschewing 'break-out boxes' and other more modern layout innovations in favour of a traditional straight text. The diagrams are equally no nonsense: simple clear line drawings, which as a result effectively convey what are sometimes complex concepts. Lots to crib from here for lecture presentations! … In their quest to create a single book covering such a large subject area the authors have been surprisingly successful, and the result is an interesting, readable book that serves both as an excellent introduction for postgraduates and a useful reference for those in the field. … it will no doubt become a regularly consulted reference work in every materials science library.'

    Source: Chemistry World

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