One of the central issues in the investigation of semiconductors (and solid-state materials in general) is related to the study of various defects and their effects on materials' properties and the operation of electronic devices.

The topics of electronic properties of extended defects (i.e., dislocations, stacking faults, grain boundaries, and precipitates) in semiconductors and the influence of these defects on various electronic devices have been of great importance and interest for several decades. During this period of intensive research and development of semiconductor materials and devices, the majority of the defects and the mechanisms of their formation were elucidated. This was accompanied with concurrent efforts in eliminating the unwanted defects. For controlling properties of semiconductors through defect engineering, it is essential to understand the interactions between various defects and their effect on semiconductor and device characteristics.

With the development of various microscopy techniques, including scanning probe techniques, the fundamental properties of various defects have been better understood and many details have been further clarified.

The main objective of this book is to outline the basic properties of extended defects, their effect on electronic properties of semiconductors, their role in devices, and the characterization techniques for such defects. We hope that this book will be useful to both undergraduate and graduate students and researchers in a wide variety of fields in physical and engineering sciences.