Book contents
- Frontmatter
- Contents
- Preface
- 1 Introduction
- Part I Basic properties
- Part II Characterization techniques
- 6 Electrical characterization by Fermi-probe technique
- 7 Electrical characterization by thermal activation
- 8 Characterization of oxide/silicon energy band alignment: internal photoemission and X-ray photoelectron spectroscopy
- 9 Electron spin-based methods
- Part III Real MOS systems
- Index
- References
7 - Electrical characterization by thermal activation
from Part II - Characterization techniques
Published online by Cambridge University Press: 05 October 2014
Book contents
- Frontmatter
- Contents
- Preface
- 1 Introduction
- Part I Basic properties
- Part II Characterization techniques
- 6 Electrical characterization by Fermi-probe technique
- 7 Electrical characterization by thermal activation
- 8 Characterization of oxide/silicon energy band alignment: internal photoemission and X-ray photoelectron spectroscopy
- 9 Electron spin-based methods
- Part III Real MOS systems
- Index
- References
Summary
Thermally stimulated current method
Basic principle
The measurement method of thermally stimulated current (TSC) has a long history in the investigation of interface states and oxide traps (Simmons and Taylor, 1972; Mar and Simmons, 1975) even if it has not reached the same level of attention as the C–V and conductance techniques. It is especially suited for traps positioned close to the oxide/semiconductor interface, often called border traps (Fleetwood et al., 1998). The principle is based on releasing charge carriers from the trap potentials by first cooling the sample to a temperature low enough to make the thermal emission rate of the captured carrier in the region of hours, or long enough to be considered “frozen in.” This is followed by a linear temperature increase, releasing charge carriers, which gives rise to a current from which activation energies and capture cross sections can be obtained.
We will discuss TSC based on an example shown in Fig. 7.1 for a MOS structure with high-k oxide, including interface states and border traps. In our example, the latter are assumed to exist in the transition region, often occurring at the interface between the high-k oxide and an interlayer with properties as discussed in Section 4.5 (Lukovsky and Phillips, 2005).
Information
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- Chapter
- Information
- The MOS System , pp. 168 - 195Publisher: Cambridge University PressPrint publication year: 2014
References
, and (1990). Entropy measurements on slow Si/SiO2 interface states. Appl. Phys. Lett. 56, 1245.CrossRefGoogle Scholar
and (1978). Thermodynamical analysis of optimal recombination centers in thyristors. Solid-State Electron. 21, 1571.CrossRefGoogle Scholar
and (1983). Energy concepts of insulator-semiconductor interface traps. J. Appl. Phys. 54, 5240.CrossRefGoogle Scholar
and (1989). Vibronic states of silicon-silicon dioxide interface traps. Semicond. Sci. Technol. 4, 1106.CrossRefGoogle Scholar
, , and (1998). Bulk oxide traps and border traps in metal-oxide-semiconductor capacitors. J. Appl. Phys. 84, 6141.CrossRefGoogle Scholar
(1979). Energy resolved DLTS measurement of interface states in MIS structures. Appl. Phys. Lett. 34, 802.CrossRefGoogle Scholar
(1982). Measurement of semiconductor-insulator interfaces states by constant-capacitance deep-level transient spectroscopy. J. Vac. Sci. Technol. 21, 303.CrossRefGoogle Scholar
, , and (1979). Measurement of interface defect states at oxidized silicon surfaces by constant-capacitance DLTS. J. Vac. Sci. Technol. 16, 1407.CrossRefGoogle Scholar
and (2007). Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique. Mat. Sci. Eng. C 27, 1069.CrossRefGoogle Scholar
(1974). Deep level transient spectroscopy: A new method to characterize traps in semiconductors. J. Appl. Phys. 45, 3023.CrossRefGoogle Scholar
and (2005). Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxide in metal oxide semiconductor (MOS) structures. Thin Solid Films 486, 200.CrossRefGoogle Scholar
and (1975). Surface-generation statistics and associated thermal currents in metal-oxide-semiconductor structures. Phys. Rev. B 11, 775.CrossRefGoogle Scholar
, and (1975). A correlation method for semiconductor transient signal measurements. J. Appl. Phys. 46, 2638.CrossRefGoogle Scholar
, , , , and (2001). Border traps in 6H-SiC metal-oxide-semiconductor capacitors investigated by the thermally stimulated current technique. Appl. Phys. Lett. 79, 4034.CrossRefGoogle Scholar
, , and (2011). Characterization of traps in the transition region at the HfO2/SiOx interface by thermally stimulated currents. J. Electrochem. Soc. 158, G63.CrossRefGoogle Scholar
and (1991). Deep level transient spectroscopy: Increased accuracy of interpretation of silicon/silicon dioxide interface state data by the assistance of computer simulations. J. Appl. Phys. 70, 6915.CrossRefGoogle Scholar
, , and (1970). Thermal and optical emission and capture and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance measurements. Solid-State Electron. 13, 759.CrossRefGoogle Scholar
and (1972). High-field isothermal currents and thermally stimulated currents in insulators having discrete trapping levels. Phys. Rev. B 5, 1619.CrossRefGoogle Scholar
(1966). Determination of deep centers in conducting gallium arsenide. J. Appl. Phys. 37, 3411.CrossRefGoogle Scholar
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