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Nanowire Transistors
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  • Cited by 11
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    This (lowercase (translateProductType product.productType)) has been cited by the following publications. This list is generated based on data provided by CrossRef.

    Gola, Deepti Singh, Balraj and Tiwari, Pramod Kumar 2018. Subthreshold Modeling of Tri-Gate Junctionless Transistors With Variable Channel Edges and Substrate Bias Effects. IEEE Transactions on Electron Devices, Vol. 65, Issue. 5, p. 1663.

    Gupta, Manish and Kranti, Abhinav 2018. Raised Source/Drain Germanium Junctionless MOSFET for Subthermal OFF-to-ON Transition. IEEE Transactions on Electron Devices, Vol. 65, Issue. 6, p. 2406.

    van der Heide, Paul A. W. 2018. Critical need and future directions of SIMS depth profiling in CMOS fabrication. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 36, Issue. 3, p. 03F105.

    Chasin, Adrian Franco, Jacopo Kaczer, Ben Putcha, Vamsi Weckx, Pieter Ritzenthaler, Romain Mertens, Hans Horiguchi, Naoto Linten, Dimitri and Rzepa, Gerhard 2017. BTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistors. p. 5C-4.1.

    Gity, Farzan Ansari, Lida Lanius, Martin Schüffelgen, Peter Mussler, Gregor Grützmacher, Detlev and Greer, J. C. 2017. Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films. Applied Physics Letters, Vol. 110, Issue. 9, p. 093111.

    Gupta, Manish and Kranti, Abhinav 2017. Variation of Threshold Voltage With Temperature in Impact Ionization-Induced Steep Switching Si and Ge Junctionless MOSFETs. IEEE Transactions on Electron Devices, Vol. 64, Issue. 5, p. 2061.

    Narducci, Dario 2017. Silicon Nanomaterials Sourcebook. p. 555.

    Gupta, Manish and Kranti, Abhinav 2017. Hysteresis free negative total gate capacitance in junctionless transistors. Semiconductor Science and Technology, Vol. 32, Issue. 9, p. 095014.

    Gupta, Manish and Kranti, Abhinav 2017. Steep-Switching Germanium Junctionless MOSFET With Reduced OFF-State Tunneling. IEEE Transactions on Electron Devices, Vol. 64, Issue. 9, p. 3582.

    Mukherjee, Chhandak Maneux, Cristell Pezard, Julien and Larrieu, Guilhem 2017. 1/f Noise in 3D vertical gate-all-around junction-less silicon nanowire transistors. p. 34.

    Gupta, Manish and Kranti, Abhinav 2016. Transforming gate misalignment into a unique opportunity to facilitate steep switching in junctionless nanotransistors. Nanotechnology, Vol. 27, Issue. 45, p. 455204.

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    Nanowire Transistors
    • Online ISBN: 9781107280779
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Book description

From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in academia and industry.


'This is a very interesting and advanced book that gives a deep introduction to and explanation of the physics behind nanowire transistors … It is well written, organized, and self-explanatory, and can be used as a reference by those who wish to enter into the field of nanowire and nanostructure-based electronics. The book has many up-to-date references and clear and precise text with plenty of figures and diagrams, and therefore is a fundamental resource. … This is a well-organized book wherein the preceding chapters are used as the basis for understanding the following ones. … [It] is suitable for graduate researchers in materials science and semiconductor devices as well as engineers who want deeper insight into the explanation of nanowire-based devices.'

Joana Vaz Pinto Source: MRS Bulletin

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