In this paper, efficacy of p-n junction p-CuO/n-ZnO composite is assessed as a potential photocatalyst by monitoring degradation of methylene blue (MB) in the presence of UV light. The p-n junction photocatalyst, p-CuO/n-ZnO, was prepared by ball milling of ZnO and CuO in water. The structural properties of p-CuO/n-ZnO composite were characterized by x-ray diffractometer and surface charge properties via zeta potential measurement. The degradation of MB in the presence of composite powder was monitored via UV-vis spectrometer. Various studies affecting the degradation rate of MB were conducted as a function of weight fraction of CuO in the composite and ball milling time. The highest degradation rate of MB was achieved in CuO (10 Wt.%)/ZnO for which high negative zeta potential was recorded. The MB degradation efficiency was found to decrease with the samples ball milled for time longer than 12 hours due to increased agglomeration of particles. The mechanisms that influence the photocatalytic activity of p-CuO/n-ZnO are discussed based on the p-n junction principle.

We report on the development and capabilities of two new measurement systems developed at Fraunhofer-IPM. The first measurement system is based on an extension of the Van der Pauw method and is suitable for cube-shaped samples. A mapping of the electrical conductivity tensor of a Skutterudite-SPS samples produced at the Instituto de Microelectrónica de Madrid is presented. The second measurement system is a ZTmeter also developed at the Fraunhofer-IPM. It enables the simultaneous measurement of the electrical conductivity, Seebeck coefficient and thermal conductivity up to 900 K of cubes at least 5x5x5 mm3 in size. The capacity of this measurement system for measuring the anisotropy of the transport properties of a (Bi,Sb)2Te3SPS sample produced by KTH is demonstrated by simply rotating the samples.

Adult bone marrow derived mesenchymal stem cells (MSCs) represent an important source of cells for tissue regeneration. Control of MSC migration and homing is still unclear. The goal of this study was to identify potent chemoattractants for MSCs and characterize MSC chemotaxis using a microfluidic device as a model system and assay platform. The three chemokines compared in this study were CXCL7, CXCL12, and AMD 3100.

Microfluidic devices made of polydimethysiloxane (PDMS) were fabricated by soft lithography techniques and designed to generate a stable linear chemokine gradient. Cell movements in response to the gradient were captured by timelapse photos and tracked over 24 hours. Chemokine potency was measured via several chemotaxis parameters including: velocity in the direction of interest (V), center of mass (Mend), forward migration indice (YFMI). The migratory paths of the cells were mapped onto a displacement plot and compared.

The following results were measured in the direction of interest (towards higher concentrations of chemokine): For velocity, only cells exposed to CXCL12 had a statistically significant (p=.014) average velocity (V=0.19 ± 0.07 um/min) when compared to the control condition (V=0.06 ±0 .04 um/min). For the center of mass, where the displacement of cells from their starting positions were compared, again only CXCL12 (Mend= 53.9 ± 10.8 um) stimulated statistically significant (p = .013) displacement of cells compared to the control condition (Mend = 19.3 ± 16.1 um). For the forward migration index, the efficiency of cell movement was measured. Indices in both the CXCL12 (YFIM = 0.19 ± 0.08) and CXCL7 (YFIM = 0.09 ±0.03) conditions were statistically significant (p = .023 for CXCL12 and p = .035 for CXCL7) when compared with the control index (YFIM = .04 ± .02).

This study demonstrated the use of microfluidic devices as a viable platform for chemotaxis studies. A stable linear chemokine gradient was maintained over a long time scale to obtain cell migration results. CXCL12 was quantitatively determined to be the most potent chemoattractant in this research; these chemoattractive properties promote its use in future developments to control MSC homing.

Ferritic/martensitic steels such as HT9 steel, is used for structural components in nuclear power plants because of its high strength and good swelling resistance. Understanding the mechanical behavior of these steels is quite important, since it will affect the strength and the life of the component. In this study, a dislocation density based crystal plasticity finite element model is developed in which different types of dislocation evolves on the activated 12 slip systems in alpha-iron. The dislocation evolves in the form of closed loop and the dislocation density is tracked as internal state variable, the generation and annihilation of dislocations are modeled based on the dislocation interaction laws. The plastic flow is calculated based on the dislocation densities and a generalized Taylor equation is used as the hardening law, and the hardening is assumed to be isotropic in this study. The evolution of polycrystal texture of alpha-iron is presented in the form of pole figures, which indicate the orientation spread and agree with the experimental result. The model also indicates the inhomogeneous dislocation distribution and stress concentration at the grain boundaries.

The Department of Materials and Metallurgical Engineering faculty at the South Dakota School of Mines and Technology (SDSM&T) has developed a unique undergraduate program that integrates research, extracurricular activities, and outreach experiences. A common thread throughout the program is an introduction to the artistic and historical background of metallurgical engineering. These activities use kinesthetic learning to promote student learning of metallurgical engineering, aspects often not traditionally included in engineering curricula. These programs are similar to those envisioned by the National Academy of Engineering in response to the changing needs of engineering. These are described in two visionary books published by the National Research Council.

A major focus of the program integrates blacksmithing activities with curricular, extracurricular, and outreach activities. All SDSM&T students are invited to a weekly blacksmithing activity called Hammer-in. Blacksmithing-related laboratories were added to the curriculum. Additionally, students developed a portable blacksmithing laboratory with faculty supervision. The laboratory has been taken to K-12 schools, including Native American schools on reservations, to reach out to regional students, thereby promoting interest in STEM careers. The success of these activities led to their incorporation into a National Science Foundation Research Experience for Undergraduate (REU) at SDSM&T called Back to the Future that focuses on understanding new technologies through historical antecedents. The SDSM&T students who participated in this REU used this experience as part of their junior/senior design courses. This program has increased enrollment in the department and has led to better learning outcomes for the students.

Our works have been concentred on the characterization of single wall carbon nanotube (SWCNT) composites films in order to obtain a new easy processing anode for organic device. The morphology and charge transport in poly(3,4-ethylenedioxythiophene) poly (4-styrenesulfonate) / SWCNT thin layers was investigated. PEDOT:PSS polymer acts as host material and an excellent dispersion of metallic single wall carbon nanotube (m-SWCNT) can be achieved enhancing the polymer’s electrical properties. The PEDOT:PSS/SWCNT films are prepared on glass substrates using spin coating method. Raman spectroscopy has been used to observe the surface states of PEDOT: PSS/SWCNT films and to realize Raman mapping that allow determining the homogeneity of the SWCNT dispersion into the films. Optical and electrical characterizations (sheet resistance, conductivity) of the films are also presented.

Density-functional formalism is applied to study the ground state properties of γ-U-Zr and γ-U-Mo solid solutions. Calculated heats of formation are compared with CALPHAD assessments. We discuss how the heat of formation in both alloys correlates with the charge transfer between the alloy components. The decomposition curves for γ-based U-Zr and U-Mo solid solutions are derived from Ising-type Monte Carlo simulations. We explore the idea of stabilization of the δ-UZr2 compound against the α-Zr (hcp) structure due to increase of Zr d-band occupancy by the addition of U to Zr. We discuss how the specific behavior of the electronic density of states in the vicinity of the Fermi level promotes the stabilization of the U2Mo compound. The mechanism of possible Am redistribution in the U-Zr and U-Mo fuels is also discussed.

Bismuth-Antimony alloys have been shown to have high ZT values below room temperature, especially for single crystals. For polycrystalline samples, impurity doping and magnetic field have proven to be powerful tools in the search for understanding and improving thermoelectric performance. Nanopolycrystalline Bi0.88Sb0.12 doped with 0.05, 0.5 and 3 % Ce were prepared by ball milling and dc hot pressing techniques. Electrical resistivity, Seebeck coefficient, thermal conductivity, carrier concentration, mobility, and magnetization are measured in a temperature range of 5-350 K and in magnetic fields up to 9 Tesla. The effects of Ce doping on the thermoelectric properties of Bi0.88Sb0.12 in zero magnetic field are discussed.

Recently, GaN has attracted much attention for short wavelength LEDs, LDs and future opto-electronic integrated devices. In our study, Boronmonophosphide(BP) grown on Si(100) by MOCVD is used for growing cubic-GaN (c-GaN). The epitaxial growth of GaN/BP/Si has been carried out. We observed the crystal defects by scanning electron microscope(SEM), transmission electron microscopy(TEM), and surface X-ray diffraction(XRD). The dislocation density in the BP layer markedly decreased with increasing the thickness. However the difference of the lattice constant between BP and Si leads to high dislocation densities in GaN layer. Therefore, the epitaxial growth of Si doped BP on Si has been carried out, in order to observe the effect of Si doping on BP crystalline quality. We observed the crystal defects by XRD and cross-sectional TEM. The dislocation of interfaces will be discussed.

Due to its excellent thermal shock resistance, mechanical and chemical stability at both room and elevated temperatures, silicon carbide (SiC) is an attractive material for environmental protection and energy production applications such as catalyst supports, molten metal filters and gas separation membranes. Precise pore size control and high porosity are the key deciding factors for such applications. In this study, we demonstrated the fabrication of bi-layered SiC membranes with a graded porosity, consisting of porous nano-SiC layer on the surface of a porous coarse-grained SiC support layer. Nano-SiC powders utilized for this study were synthesized using a novel process based on mechanical activation of silica fume and graphite mixtures, resulting in particle sizes as small as 30 nm. The effects of sintering temperature were investigated to control the pore size, particle size and overall density of the bi-layered membrane.

CuInS2 (CIS) films were prepared by chemical spray pyrolysis (CSP) method in air using CuCl2, InCl3 and SC(NH2)2 as precursor materials. The effect of the absorber growth temperature in the interval of 240-350 °C and precursors’ molar ratio in the spray solution on the CIS film properties and ZnO/In2S3/CIS-type CSP-deposited thin film solar cell output characteristics has been studied. CIS films were characterized by XRD and EDX, solar cells were characterized by IV curves in dark and under illumination, and junction barrier height (Φb). The highest Φb of 1170 meV and open circuit voltage (Voc) of 560 mV were recorded for the cell with CIS absorber grown at 250 °C. Increasing the CIS deposition temperature decreases Φb and Voc, makes a component of solar cell photosensitive and increases current density. The precursors’ molar ratio in spray solution becomes relevant at CIS growth temperatures higher than 300 °C as deposition of thiourea-rich solutions suppresses oxide formation in CIS layer and contributes to higher open circuit voltage.

Conversion of basal plane dislocations (BPDs) to threading edge dislocations (TEDs) has been observed in 4H-SiC epilayers by simple high temperature annealing. Grazing incidence reflection synchrotron X-ray topography was used to image the dislocations in the epilayers. By comparing the X-ray topographs before and after annealing, some of the BPDs were confirmed to convert to TEDs from the epilayer surface. The dislocation behaviors during annealing are explained and the mechanism of BPD conversion is discussed. It is argued that the conversion process is realized by constricted BPD segments cross-slipping to the prismatic plane driven by the image force and TED glide on its slip plane driven by the line tension. Certain kinetic processes may assist the formation of constrictions on the BPDs.

A thermally-activated micelle consisting of a crystallizable poly(caprolactone), PCL, core and a poly(ethylene glycol), PEG, corona was developed to contain magnetic nanoparticles and anti-cancer agent doxorubicin as well as display a targeting RGD peptide. This system has the potential to target cancer cells, deliver combination hyperthermia and chemotherapy, and offer magnetic resonance imaging contrast. The micelles self-assemble in aqueous solutions and form a crystalline core with a melting transition ranging from 40 to 50 °C, depending on the length of the PCL blocks, with dynamic light scattering showing micelle sizes typically ranging from 20 to 100 nm, depending on block lengths and added drug or nanoparticles. The micelles become unstable as they are heated above their melting point, creating a thermally-activated drug release mechanism. By adding magnetite (Fe3O4) nanoparticles into the PCL core, the micelles can be heated using an externally applied AC magnetic field to induce hyperthermia in combination with the thermally-activated drug release. The polymers and magnetic nanoparticles (MNPs) were synthesized and characterized in our laboratories. The melting transitions of the PCL micelle cores were investigated using microcalorimetry. The heating of nanoparticles and magnetomicelles was conducted using a custom-built hyperthermia coil capable of generating fields of several hundred Oersteds at frequencies ranging from 50 to 450 kHz. Heating of MNPs was maximized at high field intensities. RGD peptides were attached to the PEG corona using maleimide chemistry, and the ability of the RGD-derivatized micelles to target integrin-expressing cells was investigated using fluorescent dye PKH26 to identify the localization of micelles in cultured human kidney (293) cells in vitro. The crystallizable (and meltable) cores in these micelles were designed to overcome drug leakage common in liposome systems and release the drug on demand after a period of time for localization to integrin receptors.

The effect of wet chemical treatment on the magnetic tunneling junction (MTJ) was examined. The tunneling magneto-resistance (TMR) increased and the resistance of anti-parallel state and parallel state decreased when a wet cleaning treatment was carried out after a reactive ion etching process. Furthermore, the exfoliation between the capping layer and Inter layer Dielectric (ILD) was prevented. Presumably, these were due to the elimination of the damaged layer and the residues. This investigation showed that the wet treatment after the MTJ patterning using RIE process could improve the MTJ properties without degradation of Hc, such as TMR and Rlow .

A range of advanced imaging techniques have been brought together to provide a comprehensive picture of cement microstructure for nuclear waste immobilization. Image analysis of Nirex Reference Vault Backfill (NRVB) has been used to characterize the Calcium-Silicate-Hydrate (C-S-H) matrix fraction. Through weight loss measurements and digital image correlation of OPC-based cement blends we have quantified the development of microstructure surface strains during the initial 48 hrs hardening period. The build-up of displacements on the microstructure scale indicated grain-like compressive areas, surrounded by a network of tensile regions. Serial sectioning of NRVB using ultra-microtome cutting has been explored for advanced high-resolution 3D microstructure characterization, while X-ray Computed Tomography (XCT) has been used to obtain information of the 3-D pore space and size distribution of air pores in NRVB non-destructively.

The crystallinity, electrical, and optical properties of the ferroelectric/fluorescent oxide structures using sol-gel-derived (Ba0.6Sr0.4)TiO3 (BST) and (Sr0.8Eu0.2)Bi2.2Ta2O9 (Eu-SBT) grown on STO(110) single crystal substrates were introduced for the first time. In the present structures, the SBT films partly included a (116)-oriented Eu-SBT crystallite. The polarization vs. voltage characteristics of the BST/Eu-SBT structures showed the hysteresis loop caused by spontaneous polarization reversal, and then several emission peaks from Eu3+ ion were observed in a photoluminescence spectrum of a present BST/Eu-SBT structure.

Three types of Ganium Nitride (GaN) transistors were studied in this work. The devices were fabricated and exhibited unique characteristics over on-state current and off-state blocking performances. We also compared the performance differences of devices fabricated by multiepitaxial GaN/AlGaN layers on different substrates (Sapphire and Si) and evaluated the correlations among starting substrate, device variation, and manufacturing uniformity. The first device is a normally-on device with Sapphire substrate which shows good drain saturation current (Idsat) and breakdown characteristics, but the gate leakage current is quite large. The second device is a normally-off GaN transistor named metal-insulate-semiconductor (MIS) heterojunction field-effect transistor (MIS-HFET) which exhibits good performance with threshold voltage (Vth) of 3V and breakdown voltage (Vbd) of over 1800V. However the third device is a normally-off GaN metal-oxide-semiconductor field-elect transistor (MOSFET) structure which is rather difficult to exhibit good blocking characteristic due to inadequate doping process control of the reduce-surface-field (RESURF) region.

Rotating bending fatigue test are carried out on the aluminum alloy 6063-T5 for corroded and non corroded specimens. Special attention is devoted to fatigue endurance reduction caused by controlled surface corrosion on corroded specimens. Corrosion attack is implemented by submersion of specimens in an acid solution for: two, four and six minutes in order to induce three degrees of surface corrosion. The corrosion agent is a solution of hydrochloric acid with a PH close to 0.8 and solution concentration of 38%. Rotating bending fatigue tests at frequency of 50 Hz, room temperature and without environmental humidity control are carried out on 4 types of specimens: without corrosion and 2, 4, and 6 minutes immersed in the solution of hydrochloric acid. Results are analyzed regarding the corrosion effect on fatigue endurance and conclusion are enlisted concerning rotating bending fatigue tests and corrosion attack on this aluminum alloy.

We show a low temperature gas-phase synthesis route to produce faceted aluminum crystals in the aerosol phase. Use of triisobutylaluminum whose decomposition temperature is below the melting point of elemental aluminum enabled us to grow nanocrystals from its vapor. Combustion tests show an increase in energy release compared to commercial nanoaluminum. Production of aluminum in an oxygen free environment resulted in a bare aluminum surface that was passivated in separate experiments with nickel and iron by decomposition of their carbonyl precursors.

This paper presents novel 3D heterogeneous integrations using MEMS Devices for RF applications. We propose a 3D heterogeneous integration method that combines the advantages of LTCC, passive integration, and MEMS technologies. The basic concept is to form a large-size LTCC wiring wafer and then to form high-Q passives or MEMS filters directly on the wafer surface. Other functional devices such as ICs, SAWs, and MEMS switches are mounted above the surface-formed devices. A miniaturized duplexer consisted of IPD, SAW, and film bulk acoustic resonator (FBAR); and a next generation duplexer module consisted of an MEMS tunable filter and a piezoelectric transducer (PZT)-actuated RF MEMS switch were constructed to demonstrate its feasibility and effectiveness.