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In Chapters 12–15, we discussed in detail the properties of growth processes dominated by deposition and surface diffusion. We saw that one origin of randomness is the stochastic nature of the deposition flux, which generates a nonconservative noise in the growth equations. A second component of randomness on a crystal surface comes from the activated character of the diffusion process. As we show in this chapter, this type of randomness generates a conservative component to the noise, leading to different exponents and universality classes.
While diffusive noise is certainly expected to be present in MBE, there is no experimental evidence for the universality class generated by it. For this reason, we separate it from the discussion of the simple MBE models. This chapter can be considered to be a theoretical undertaking of interest in its own right, investigating the effect of the conservation laws on the universality class.
Conservative noise
An important contribution to randomness on a crystal surface arises from the activated character of the diffusion process. Equation (13.5) results from a deterministic current that contributes to interface smoothing – i.e., only particle motion that aids smoothing is included. But, as discussed in Chapter 12, particle diffusion is an activated process in which all possible moves – each with its own probability – are allowed. Because the nature of the diffusion process is probabilistic, an inherent randomness is always present.
The notion of universality suggests that the exponents determined in the previous chapters are unique, since they belong to the only possible growth equation with a set of given symmetries. Any model or experiment will show these exponents if the hydrodynamic limit has been reached. But there is one term in all these equations that we have largely ignored thus far, one whose form is not fixed by symmetry principles: the noise η. We have assumed that this noise is uncorrelated – i.e., that it has a Gaussian distribution. But is this the only type of noise possible in a physical system?
What if the magnitude of the noise in a given point is not independent of the magnitude of the noise in a different point – i.e., what if there are spatial correlations in the noise? What if the magnitude of the noise at a given time is not independent of the noise at a different time – i.e., what if there are temporal correlations in the noise? In many experimental situations, we know little about the nature of any noise that may be present, so to consider it Gaussian is perhaps an unrealistically simple assumption.
One possibility is that the correlation length of the noise is finite, i.e., that the different events ‘know’ about each other only if they are within a finite spatial separation ξ or temporal separation τ.
In previous chapters, we focused on interfaces that grow and roughen due to thermal fluctuations, the origin of the randomness arising from the random nature of the deposition process. For a class of interface phenomena, however, we do not have deposition, but rather we have an interface that moves in a disordered medium. The experiment described in Chapter 1 in which a fluid interface propagates through a paper towel is one example. The velocity of the interface is affected by the inhomogeneities of the medium: the resistance of the medium against the flow is different from point to point; we call this quenched noise, because it does not change with time. Fluid pressure and capillary force drive the fluid, and disorder in the medium slows its propagation. If the disorder ‘wins’ the competition, the interface becomes ‘pinned.’ Conversely, if the driving forces win, the interface stays ‘depinned.’ This transition from a pinned to a moving interface – obtained by changing the driving force – is called the depinning transition.
In the following three chapters, we discuss how quenched disorder leads to interface pinning – and depinning. We will show that the same theoretical ideas describe interface motion in a random field Ising model, which is relevant to the problem of domain growth in a disordered magnetic material.
The problem of a moving interface in the presence of quenched noise is a new type of critical phenomena, arising from ‘quenched randomness.’
The primary focus of this book is on interface roughening generated by various nonequilibrium deposition processes. However, crystal surfaces may be rough even under equilibrium conditions – with no atom deposition. Consider, e.g., a flat surface in equilibrium at a very low temperature. Thermal fluctuations do not have an observable effect on the shape of the crystal, and all atoms remain in their appropriate lattice positions. As temperature increases, the probability that an atom will break its bonds with its neighbors increases. Some atoms hop onto neighboring sites, thereby generating roughness on the atomic scale. At first glance, one might expect a gradual transition to a rough morphology, since the higher the temperature, the more the atoms wander on the surface – until the surface melts. Indeed this is a correct description of the short-ranged correlations between neighboring atoms. However, as we shall see, on much longer length scales there is a distinct (higher order) thermodynamic phase transition that takes place at a critical temperature TR. For T < TR the crystal is smooth, corresponding to a flat facet, while for T > TR it is rough, implying a rounded crystal shape analogous to a liquid drop. This ‘roughening transition’ can be successfully described using ideas of statistical mechanics, the formalism being analogous to that developed in previous chapters.
Equilibrium fluctuations
The lowest energy state of the crystal corresponds to a flat surface.
In the previous chapter, we introduced a simple growth model that exhibits generic scaling behavior. In particular, the interface width w increases as a power of time [Eq. (2.4)], and the saturated roughness displays a power law dependence on the system size [Eq. (2.5)]. There exists a natural language for describing and interpreting such scaling behavior, and this is the language of fractals. In this chapter, we introduce the concepts of fractal geometry, which provide a language in terms of which to better understand the meaning of power laws. Isotropic fractals are self-similar: they are invariant under isotropic scale transformations. In contrast, surfaces are generally invariant under anisotropic transformations, and belong to the broader class of self-affine fractals. We will therefore also discuss the basic properties of self-affine fractals, as well as numerical methods for calculating the critical exponents α, β, and z.
Self-similarity
An object can be self-similar if it is formed by parts that are ‘similar’ to the whole. One of the simplest self-similar objects is the Cantor set, whose iterative construction at successive ‘generations’ is shown in Fig. 3.1. If we enlarge the box of generation 3 by a factor of three, we obtain a set of intervals that is identical to the generation 2 object. In general, at generation k we can enlarge part of the object by a factor of three and obtain the object of generation (k – 1).
Most of our life takes place on the surface of something. Sitting on a rock means contact with its surface. We all walk on the surface of the Earth and most of us don't care that the center of the Earth is molten. Even when we care about the interior, we cannot reach it without first crossing a surface. For a biological cell, the surface membrane acts not only as a highly selective barrier, but many important processes take place directly on the surface itself.
We become accustomed to the shapes of the interfaces we encounter, so it can be surprising that their morphologies can appear to be quite different depending on the scale with which we observe them. For example, an astronaut in space sees Earth as a smooth ball. However Earth appears to be anything but smooth when climbing a mountain, as we encounter a seemingly endless hierarchy of ups and downs along our way.
We can already draw one conclusion: surfaces can be smooth, such as the Himalayas viewed from space, but the same surface can also be rough, such as the same mountains viewed from earth. In general the morphology depends on the length scale of observation!
How can we describe the morphology of something that is smooth to the eye, but rough under a microscope? This is one question we shall try to answer in this book. To this end, we will develop methods to characterize quantitatively the morphology of an arbitrary interface.
The EW equation, discussed in the previous chapter, was the first continuum equation used to study the growth of interfaces by particle deposition. The predictions of this linear theory change, however, when nonlinear terms are added to the growth equation. The first extension of the EW equation to include nonlinear terms was proposed by Kardar, Parisi and Zhang (KPZ). The KPZ equation, as it has come to be called, is capable of explaining not only the origin of the scaling form (2.8), but also the values of the exponents obtained for the BD model.
Although the KPZ equation cannot be solved in closed form due to its nonlinear character, a number of exact results have been obtained. Moreover, powerful approximation methods, such as dynamic renormalization group, can be used to obtain further insight into the scaling properties and exponents. In this chapter, we introduce the KPZ equation and present some of its key properties. The discussion will lead us to the exact values of the scaling exponents for one-dimensional interfaces. The renormalization group approach to the KPZ equation is then treated in the following chapter.
Construction of the KPZ equation
Although one cannot formally ‘derive’ the KPZ equation, one can develop a set of plausibility arguments using both (i) physical principles, which motivate the addition of nonlinear terms to the linear theory (5.6), and (ii) symmetry principles, as we did in the case of the EW equation.
The goal of understanding the effect of quenched noise on interface morphology has motivated a large number of numerical studies. Several models have been developed, both for understanding specific phenomena such as fluid flow or domain growth, and also for the efficient determination of the scaling exponents. In general, it is agreed that quenched noise produces anomalous roughening, with a roughness exponent larger than the values predicted by the KPZ or EW equations.
We can partition the numerical efforts in two distinct classes, according to the morphology of the interface.
(i) There is a family of models that neglects overhangs on the interface, by proposing a growth rule that produces self-affine interfaces. In some of these models, the scaling exponents can be obtained exactly by mapping the interface at the depinning transition onto a directed percolation problem.
(ii) There is a second family of models that allows overhangs, often leading to self-similar interfaces. In some cases, the interface generated by these models can be mapped onto a site percolation problem, and the scaling exponents can be estimated by exploiting this mapping.
Moreover, models leading to self-affine interfaces can also be classified in two main universality classes. As we show, the two classes have different scaling exponents, which can be obtained using numerical and analytical methods.
In Chapter 9 we discussed the dynamics of a driven interface in a porous medium. However, there are a number of problems in physics in which one is interested in the properties of an equilibrium interface, when there is no driving force pushing the interface in a selected direction. A closely related problem is the equilibrium fluctuations of an elastic line in a porous medium, which is a problem of interest in many branches of physics ranging from flux lines in a disordered superconductor (see Fig. 1.4) or the motion of stretched polymer in a gel. In this chapter we discuss the properties of a directed polymer (DP) in a two-dimensional random medium, and the relation between the directed polymer problem and the interface problem.
Discrete model
Consider a discrete lattice whose horizontal axis is x, and vertical axis is h (see Fig. 26.1). The polymer starts at x = 0 and h = 0, and moves along the x direction in discrete steps. It can go directly along x, or it can move via transverse jumps, such that |h(x + 1) – h(x)| = 0, 1. There is an energy cost (‘penalty’), for every transverse jump. This simulates a line tension, discouraging motion along the h axis. On every bond parallel to x, a random energy ε(x, h) is assigned.
The total energy of the DP is the sum over the energies along the polymer length, which includes the sum over the random energies arising from motion along the x direction, and the energy penalties for motion along the h axis.
We have seen that surfaces grown by MBE are rough at large length scales. Moreover, the dynamics of the roughening process follows simple power laws that are predictable if one uses the correct growth equation. In our previous discussion, we neglected a particular property of the diffusion process, the existence of the Schwoebel barrier, biasing the atom diffusion (see §12.2.4). In this chapter we show that this diffusion bias generates an instability, which eventually dominates the growth process. The growth dynamics do not follow the scaling laws discussed in the previous chapters and the resulting interface is not self-affine.
Diffusion bias and instabilities
We saw in §12.2.4 that the existence of an additional potential barrier at the edge of a step generates a bias in the diffusion process, making it improbable that an atom will jump off the edge of the step. Next we investigate how one can incorporate this effect into the continuum equations.
A nonzero local slope corresponds to a series of consecutive steps in the surface (see Fig. 20.1). Suppose an atom lands on the interface and begins to diffuse. If it reaches an ascending step, it sticks by bonding with the atoms of the step. If it diffuses toward the edge of a descending step, there is only a small probability the particle will jump down the step, since the edge barrier will reflect the particle back.