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Analysis of continuous mode class-B/J efficiency model for broadband rectifier

Published online by Cambridge University Press:  04 November 2025

Yuezhi Wu Open the ORCID record for Yuezhi Wu [Opens in a new window]  and
Guohua Liu
Yuezhi Wu
Affiliation:
School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Guohua Liu*
Affiliation:
School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
*
Corresponding author: Guohua Liu; Email: ghliu@hdu.edu.cn
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Abstract

This paper presents a broadband rectifier based on GaN high electron mobility transistor (HEMT). The continuous class-B/J rectifier operation mode is analyzed in detail. The relationship between the continuous mode class-B/J rectification efficiency and the output capacitance Cout and the on-state resistance Ron is built and the rectification model is firstly presented. Then, the available impedance design space can be determined based on the rectification efficiency model. Considering the package parameters of the CGH40010F, design space at the package plane has been presented. Moreover, a broadband phase tuning network (PTN) is adjusted to satisfy this impedance space. Thus, a broadband transistor-based rectifier can be designed using the continuous class-B/J mode and the PTN. For validation, a rectifier working in 2.4–3.3 GHz was fabricated using CGH40010F. The rectification efficiency varies from 66% to 78% when RF input power is 10 W. Compared with other transistor-based rectifiers, the presented rectifier has a competitive working bandwidth.

Keywords

broadbandcontinuous mode class-B/JGaN HEMThigh efficiencyrectifier

Information

Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , First View , pp. 1 - 8
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Copyright
© The Author(s), 2025. Published by Cambridge University Press in association with The European Microwave Association.

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