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An 850 nm SiGe/Si HPT with a 4.12 GHz maximum optical transition frequency and 0.805A/W responsivity

Published online by Cambridge University Press:  22 October 2015

Zerihun Gedeb Tegegne ,
Carlos Viana ,
Marc D. Rosales ,
Julien Schiellein ,
Jean-Luc Polleux ,
Marjorie Grzeskowiak ,
Elodie Richalot  and
Catherine Algani
Zerihun Gedeb Tegegne*
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699
Carlos Viana
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699
Marc D. Rosales
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699 University of the Philippines, Diliman, Philippines
Julien Schiellein
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699
Jean-Luc Polleux
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699
Marjorie Grzeskowiak
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699
Elodie Richalot
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699
Catherine Algani
Affiliation:
Le Cnam, ESYCOM (EA2552), Le Cnam, ESIEE-Paris, UPEM, France
*
Corresponding author: Z.G. Tegegne Email: ztzerihun0@gmail.com
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Abstract

A 10 × 10 μm2 SiGe heterojunction bipolar photo-transistor (HPT) is fabricated using a commercial technological process of 80 GHz SiGe bipolar transistors (HBT). Its technology and structure are first briefly described. Its optimal opto-microwave dynamic performance is then analyzed versus voltage biasing conditions for opto-microwave continuous wave measurements. The optimal biasing points are then chosen in order to maximize the optical transition frequency (fTopt) and the opto-microwave responsivity of the HPT. An opto-microwave scanning near-field optical microscopy (OM-SNOM) is performed using these optimum bias conditions to localize the region of the SiGe HPT with highest frequency response. The OM-SNOM results are key to extract the optical coupling of the probe to the HPT (of 32.3%) and thus the absolute responsivity of the HPT. The effect of the substrate is also observed as it limits the extraction of the intrinsic HPT performance. A maximum optical transition frequency of 4.12 GHz and an absolute low frequency opto-microwave responsivity of 0.805A/W are extracted at 850 nm.

Keywords

Microwave photonicsSi-based devices and IC technologies

Information

Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 9 , Issue 1 , February 2017 , pp. 17 - 24
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2015 

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References

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