Skip to main content
×
×
Home

Analysis of totem-pole drivers in SiGe for RF and wideband applications

  • Michael Wickert (a1), Robert Wolf (a1) and Frank Ellinger (a1)
Abstract

This paper presents an analysis of totem-pole (TP) stages for driver applications and summarizes the major design constraints for an optimization with respect to P1dB, OIP3, and bandwidth. It is shown, that for matched drivers, in contrast to the widely applied common collector (CC) stage, class-AB TP stages offer higher output power and much higher power-added efficiencies (PAE) at comparable bandwidth. A combiner chip in 0.25 μm SiGe Bipolar CMOS (BiCMOS) verifying this concept in hardware as output driver is demonstrated proofing the increased achievable output power, which was measured greater than +0.1 dBm. This is approximately 11 dB higher than for a conventional CC driver. Furthermore, a concept is proposed, where the TP stage can act as a broadband matched driver for differential or balun operation ranging down to DC. As verification a broadband driver design using a class-AB TP stage is presented, which has a 3 dB bandwidth of 7.9 GHz and delivers up to +4.3 dBm into a 50 Ω load, which is 17 dB higher than its CC counterpart. At this output power it consumes a DC power of 12.3 mW and yields a PAE of 16.1%.

Copyright
Corresponding author
Corresponding author: M. Wickert Email: michael.wickert@tu-dresden.de
References
Hide All
[1]Paulraj, A.; Nabar, R.; Gore, D.: Introduction to Space–Time Wireless Communications, Cambridge University Press, Cambridge, 2003.
[2]Mayer, U.; Wickert, M.; Eickhoff, R.; Ellinger, F.: Multiband mixed-signal vector modulator IC, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Baltimore, MD, June 2011.
[3]Yeh, C.: Analysis of a single-ended push–pull audio amplifier. Proc. Inst. Radio Eng., 41 (6) (1953), 743747.
[4]Koh, K.-J.; Rebeiz, G.M.: A Q-band four-element phased-array front-end receiver with integrated Wilkinson power combiners in 0.18-µm SiGe BiCMOS technology. IEEE Trans. Microw. Theory Tech., 56 (9) (2008), 20462053.
[5]Tiiliharju, E.; Pellikka, H.; Halonen, K.: A current re-use mixer and a push–pull buffer for base station applications. IEEE Microw. Compon. Lett., 16 (9) (2006), 514516.
[6]Issakov, V.; Knapp, H.; Bakalski, W.; Wojnowski, M.; Thiede, A.; Simbürger, W.: Compact on-chip 90° and 180° splitters/combiners in silicon technology for 24 GHz applications, in Proc. of the 40th European Microwave Conf., Paris, France, September 2010.
[7]Ashburn, P.: SiGe Heterojunction Bipolar Transistors, John Wiley & Sons Ltd., Chichester, UK, 2003.
[8]Nenadovic, N.; Nanver, L.K.; Slotboom, J.W.: Electrothermal limitations on the current density of high-frequency bipolar transistors. IEEE Trans. Electron Devices, 51 (12) (2004), 21752180.
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

International Journal of Microwave and Wireless Technologies
  • ISSN: 1759-0787
  • EISSN: 1759-0795
  • URL: /core/journals/international-journal-of-microwave-and-wireless-technologies
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Keywords

Metrics

Full text views

Total number of HTML views: 2
Total number of PDF views: 14 *
Loading metrics...

Abstract views

Total abstract views: 179 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 21st September 2018. This data will be updated every 24 hours.