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Design and realization of GaN RF-devices and circuits from 1 to 30 GHz

Published online by Cambridge University Press:  07 April 2010

Jutta Kühn ,
Markus Musser ,
Friedbert van Raay ,
Rudolf Kiefer ,
Matthias Seelmann-Eggebert ,
Michael Mikulla ,
Rüdiger Quay ,
Thomas Rödle  and
Oliver Ambacher
Jutta Kühn*
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Markus Musser
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Friedbert van Raay
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Rudolf Kiefer
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Matthias Seelmann-Eggebert
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Michael Mikulla
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Rüdiger Quay
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
Thomas Rödle
Affiliation:
NXP Semiconductors – RF Power & Base Stations, Gerstweg 2 – Mailstop BY 2.016–6534 AE Nijmegen, The Netherlands.
Oliver Ambacher
Affiliation:
Fraunhofer Institute Applied Solid-State Physics – Tullastrasse 72. D-79108 Freiburg, Germany.
*
Corresponding author: J. Kühn Email: jutta.kuehn@iaf.fraunhofer.de
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Abstract

The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.

Keywords

Gallium nitridePower amplifierPower-added efficiencyMMICBroadbandLNAMM-wave

Information

Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 115 - 120
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

REFERENCES

[1]Mishra, U.K.; Shen, L.; Kazior, T.E.; Wu, Y.F.: GaN-based RF power devices and amplifiers. Proc. IEEE, 96 (2) (2008), 287–305.CrossRefGoogle Scholar
[2]Quay, R.: Gallium Nitride Electronics, Springer, Berlin, 2008.Google Scholar
[3]Mitani, E.; Haematsu, H.; Yokogawa, S.; Junichiro, N.; Yasunori, T.: Mass-production of high-voltage GaAs and GaN devices, in Proc. CS MANTECH, 2006, Vancouver, 183–186.Google Scholar
[4]Palmour, J.: Energy efficient wide bandgap devices, in IEEE Compound Semiconductor Integrated Circuits Symp., San Antonio, 2006, 4–7.CrossRefGoogle Scholar
[5]Piotrowicz, S. et al. : State of the Art 58W, 38 PAE X-band AlGaN/GaN HEMTs microstrip MMIC amplifiers, in IEEE Compound Semiconductor Integrated Circuits Symp., Monterey, 2008, 1–4.CrossRefGoogle Scholar
[6]Micovic, M. et al. : GaN MMICs for RF power applications in the 50 GHz to 110 GHz frequency range. Phys. Status Solidi C. Curr. Topics Solid State Phys., 5 (6) (2008), 2044–2046.Google Scholar
[7]Seelmann-Eggebert, M.; Merkle, T.; van Raay, F.; Quay, R.; Schlechtweg, M.: A systematic statespace approach to large-signal transistor modeling. IEEE Trans. Microwave Theory Tech., 55 (2, part 1) (2007), 195–206.CrossRefGoogle Scholar
[8]Moon, J.S. et al. : High PAE 1 mm AlGaN/GaN HEMTs for 20W and 43% PAE X-band MMIC amplifiers, in IEDM '06 (Int. Electron Devices Meeting, San Francisco, CA, USA, 2006), 1–2.CrossRefGoogle Scholar
[9]van Raay, F. et al. : A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate. IEEE Microwave Wirel. Compon. Lett., 15 (7) (2005), 460–462.CrossRefGoogle Scholar
[10]Kühn, J. et al. : Design of highly-efficient GaN X-band- power-amplifier MMICs, in IEEE MTT-S Int. Microwave Symp. Digest, Boston, 2009, 661–664.CrossRefGoogle Scholar
[11]Campbell, C. et al. : Power amplifier MMIC utilizing GaN on SiC HEMT technology, in IEEE Compound Semiconductor Integrated Circuits Symp., Monterey, 2008, 1–4.CrossRefGoogle Scholar
[12]van Raay, F. et al. : X-band high-power microstrip AlGaN/GaN HEMT amplifier MMICs, in IEEE MTT-S Int. Microwave Symp. Digest, San Francisco, 2006, 1368–1371.CrossRefGoogle Scholar
[13]Suijker, E.M. et al. : Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications, in IEEE Compound Semiconductor Integrated Circuits Symp., Greensboro, 2009, 1–4.CrossRefGoogle Scholar