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Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers

  • A. Déchansiaud (a1), R. Sommet (a1), T. Reveyrand (a1), D. Bouw (a2), C. Chang (a2), M. Camiade (a2), F. Deborgies (a3) and R. Quéré (a1)...

Abstract

This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.

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Corresponding author

Corresponding author: A. Déchansiaud Email: adeline.dechansiaud@nxp.com

References

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Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers

  • A. Déchansiaud (a1), R. Sommet (a1), T. Reveyrand (a1), D. Bouw (a2), C. Chang (a2), M. Camiade (a2), F. Deborgies (a3) and R. Quéré (a1)...

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