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Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-band

  • Jérôme Chéron (a1), Michel Campovecchio (a1), Denis Barataud (a1), Tibault Reveyrand (a1), Michel Stanislawiak (a2), Philippe Eudeline (a2) and Didier Floriot (a3)...

Abstract

The electrical modeling of power packages is a major issue for designers of high-efficiency hybrid power amplifiers. This paper reports the synthesis and the modeling of a packaged Gallium nitride (GaN) High electron mobility transistor (HEMT) associating a nonlinear model of the GaN HEMT die with an equivalent circuit model of the package. The extraction procedure is based on multi-bias S-parameter measurements of both packaged and unpackaged (on-wafer) configurations. Two different designs of 20 W packaged GaN HEMTs illustrate the modeling approach that is validated by time-domain load-pull measurements in S-band. The advantage of the electrical modeling dedicated to packaged GaN HEMTs is to enable a die-package co-design for power matching. Internal matching elements such as Metal oxide semiconductor (MOS) capacitors, Monolithic microwave integrated circuits (MMICs), and bond wires can be separately modeled to ensure an efficient optimization of the package for high power Radio frequency (RF) applications.

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Corresponding author

Corresponding author: J. Chéron Email: jerome.cheron@xlim

References

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[1]Johansson, T.; Arnborg, T.: A novel approach to 3-D modeling of packaged RF power. IEEE Trans. Microw. Theory Tech., 47 (63 PART 1) (1999), 760768.
[2]Flucke, J.; Schmückle, F.J.; Heinrich, W.; Rudolph, M.: An accurate package model for 60W GaN power transistors, In Fourth European Microwave Integrated Circuits Conf., Rome, Italy, 2009, 152155.
[3]Liang, T.; Plá, J.A.; Aaen, P.H.; Mahalingam, M.: Equivalent-circuit modeling and verification of metal–ceramic packages for RF and microwave power transistors. IEEE Trans. Microw. Theory Tech., 47 (6) (1999), 709712.
[4]Chun, C.; Pham, A.V.; Laskar, J.; Hutchison, B.: Development of microwave package models utilizing on-wafer characterization techniques. IEEE Trans. Microw. Theory Tech., 45 (10 PART 2) (1997), 19481954.
[5]Aaen, P.H.; Plá, J.A.; Balanis, C.A.: Modeling techniques suitable for CAD-based design of internal matching networks of high-power RF/microwave transistors. IEEE Trans. Microw. Theory Tech., 54 (7) (2006), 30523058.
[6]Aaen, P.H.; Plá, J.A.; Balanis, C.A.: On the development of CAD techniques suitable for the design of high-power RF transistors. IEEE Trans. Microw. Theory Tech., 53 (10) (2005), 30673074.
[7]Aaen, P.H.; Plá, J.A.; Wood, J.: Modeling and Characterization of RF and Microwave Power FETs, Cambridge University Press, Cambridge, 2007.
[8]Rudolph, M.; Fager, C.; Root, D.E.: Nonlinear Transistor Model Parameter Extraction Techniques, Cambridge University Press, Cambridge, 2011.
[9]Jardel, O. et al. : An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR. IEEE Trans. Microw. Theory Tech., 55 (12) (2007), 26602669.
[10]Rytting, D.K.: Network analyzer error models and calibration methods, In Proc 52nd ARFTG Conf., presented at Short Course on Computer-Aided RF and Microwave Testing and Design, Rohnert Park, CA, USA, 1998.
[11]Grover, F.W.: Inductance Calculations: Working Formulas and Tables, Dover Publication, New York, 1946.
[12]Mouthaan, K.; Tinti, R.; De Kok, M.; De Graaff, H.C.; Tauritz, J.L.; Slotboom, J.: Microwave modelling and measurement of the self- and mutual inductance of coupled bondwires, In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, 1997, 166169.
[13]Bahl, I.J.; Trivedi, D.K.: A designer's guide to microstrip line. Microwaves, 16 (1977), 174182.
[14]Chéron, J. et al. : Harmonic control in package of power GaN transistors for high efficiency and wideband performances in S-band, In 41st European Microwave Conf., Manchester, UK, 2011, 11111114.

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Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-band

  • Jérôme Chéron (a1), Michel Campovecchio (a1), Denis Barataud (a1), Tibault Reveyrand (a1), Michel Stanislawiak (a2), Philippe Eudeline (a2) and Didier Floriot (a3)...

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