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EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling

  • Tom K. Johansen (a1), Ralf Doerner (a2), Nils Weimann (a2), Maruf Hossain (a2), Viktor Krozer (a2) and Wolfgang Heinrich (a2)...
Abstract

In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.

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Copyright
Corresponding author
Author for correspondence: Tom K. Johansen, E-mail: tkj@elektro.dtu.dk
References
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International Journal of Microwave and Wireless Technologies
  • ISSN: 1759-0787
  • EISSN: 1759-0795
  • URL: /core/journals/international-journal-of-microwave-and-wireless-technologies
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