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Fully integrated 60 GHz transceiver in SiGe BiCMOS, RF modules, and 3.6 Gbit/s OFDM data transmission

Published online by Cambridge University Press:  25 March 2011

Srdjan Glisic ,
J. Christoph Scheytt ,
Yaoming Sun ,
Frank Herzel ,
Ruoyu Wang ,
Klaus Schmalz ,
Mohamed Elkhouly  and
Chang-Soon Choi
Srdjan Glisic*
Affiliation:
IHP Leibniz Institute for Innovative Microelectronics GmbH, Im Technologiepark 25, 15236 Frankfurt Oder, Germany. Phone:  +49 335 5625 146
J. Christoph Scheytt
Affiliation:
IHP Leibniz Institute for Innovative Microelectronics GmbH, Im Technologiepark 25, 15236 Frankfurt Oder, Germany. Phone:  +49 335 5625 146
Yaoming Sun
Affiliation:
IHP Leibniz Institute for Innovative Microelectronics GmbH, Im Technologiepark 25, 15236 Frankfurt Oder, Germany. Phone:  +49 335 5625 146
Frank Herzel
Affiliation:
IHP Leibniz Institute for Innovative Microelectronics GmbH, Im Technologiepark 25, 15236 Frankfurt Oder, Germany. Phone:  +49 335 5625 146
Ruoyu Wang
Affiliation:
IHP Leibniz Institute for Innovative Microelectronics GmbH, Im Technologiepark 25, 15236 Frankfurt Oder, Germany. Phone:  +49 335 5625 146
Klaus Schmalz
Affiliation:
IHP Leibniz Institute for Innovative Microelectronics GmbH, Im Technologiepark 25, 15236 Frankfurt Oder, Germany. Phone:  +49 335 5625 146
Mohamed Elkhouly
Affiliation:
IHP Leibniz Institute for Innovative Microelectronics GmbH, Im Technologiepark 25, 15236 Frankfurt Oder, Germany. Phone:  +49 335 5625 146
Chang-Soon Choi
Affiliation:
IHP Leibniz Institute for Innovative Microelectronics GmbH, Im Technologiepark 25, 15236 Frankfurt Oder, Germany. Phone:  +49 335 5625 146
*
Corresponding author: S. Glisic Email: glisic@ihp-microelectronics.com
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Abstract

A fully integrated transmitter (TX) and receiver (RX) front-end chipset, produced in 0.25 µm SiGe:C bipolar and complementary metal oxide semiconductor (BiCMOS) technology, is presented. The front-end is intended for high-speed wireless communication in the unlicensed ISM band of 9 GHz around 60 GHz. The TXand RX features a modified heterodyne topology with a sliding intermediate frequency. The TX features a 12 GHz in-phase and quadrature (I/Q) mixer, an intermediate frequency (IF) amplifier, a phase-locked loop, a 60 GHz mixer, an image-rejection filter, and a power amplifier. The RX features a low-noise amplifier (LNA), a 60 GHz mixer, a phase-locked loop (PLL), and an IF demodulator. The measured 1-dB compression point at the TX output is 12.6 dBm and the saturated power is 16.2 dBm. The LNA has measured noise figure of 6.5 dB at 60 GHz. Error-free data transmission with a 16 quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe and CMOS without beamforming.

Keywords

60 GHzTransmitterReceiverSiGe BiCMOS
Type
Research Article
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Special Issue 2: 60 GHz Wireless Communication Circuits and Systems , April 2011 , pp. 139 - 145
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

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