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Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer

  • Mhd Tareq Arnous (a1) (a2), Zihui Zhang (a1), Felix Rautschke (a1) and Georg Boeck (a1) (a3)
Abstract

In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome the low optima source/load impedances of a large transistor, various topologies of a broadside-coupled impedance transformer are simulated, implemented, and measured. The used transformer has a flat measured insertion loss of 0.5 dB and a return loss higher than 10 dB over a decade bandwidth (0.4–4 GHz). The transformer is integrated at the drain and gate sides of the transistor using pre-matching networks to transform the complex optima source/load impedances to the appropriate impedances of the transformer plane. The measurement results illustrate a saturated output power ranged between 80 and 115 W with an average drain efficiency of 57% and gain of 10.5 dB across 0.6–2.6 GHz.

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Corresponding author
Corresponding author: MHD T. Arnous Email: Tareq.arnous@epcos.com
References
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International Journal of Microwave and Wireless Technologies
  • ISSN: 1759-0787
  • EISSN: 1759-0795
  • URL: /core/journals/international-journal-of-microwave-and-wireless-technologies
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