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On-chip spiral inductor in flip-chip technology

Published online by Cambridge University Press:  28 January 2010

Gye-An Lee ,
Darioush Agahi  and
Franco De Flaviis
Gye-An Lee*
Affiliation:
Skyworks Solutions, Inc., 5110 North River Blvd NE, Cedar Rapids, IA 52411, USA.
Darioush Agahi
Affiliation:
Skyworks Solutions, Inc., 5110 North River Blvd NE, Cedar Rapids, IA 52411, USA.
Franco De Flaviis
Affiliation:
Electrical Engineering and Computer Science, University of California, Irvine, CA 92697, USA.
*
Corresponding author: G.-A. Lee Email: gyean.lee@skyworksinc.com
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Abstract

Performance comparison is made between on-chip spiral inductor in flip-chip versus wirebond package technology. Full-wave electromagnetic simulation and on-strip measurement techniques were used to study the performance fluctuations of inductor within flip-chip environment. Results show that the performance of a flipped silicon-based spiral inductor is affected by the radio frequency (RF) current return path differences. The RF current return path for flip-chip is concentrated on the surface of silicon layer exclusively because back side ground under silicon is floating in flip-chip technology. In addition, the bump proximity effect is also considered. On-chip inductors in flip-chip environment must be optimized by reducing the eddy current in the silicon substrate and parasitic affects by adjusting design parameters. The equivalent circuit model of the flipped on-chip spiral inductor is verified with measured results over broadband frequencies. Also, the RF flip-chip characterization technique using on-strip measurement method is presented.

Keywords

On-chip spiral inductorFlip-chipOn-strip measurementCoplanar WaveguideElectromagnetic coupling
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Issue 5 , October 2009 , pp. 431 - 440
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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