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RF MEMS ohmic switches for matrix configurations

Published online by Cambridge University Press:  02 August 2012

Giorgio De Angelis ,
Andrea Lucibello ,
Emanuela Proietti ,
Romolo Marcelli ,
Giancarlo Bartolucci ,
Federico Casini ,
Paola Farinelli ,
Giovanni Mannocchi ,
Sergio Di Nardo  and
Daniele Pochesci
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Giorgio De Angelis
Affiliation:
CNR-IMM Roma, Via Fosso del cavaliere 100, 00133, Roma, Italy. Phone: +39 06 4993 4536
Andrea Lucibello
Affiliation:
CNR-IMM Roma, Via Fosso del cavaliere 100, 00133, Roma, Italy. Phone: +39 06 4993 4536
Emanuela Proietti
Affiliation:
CNR-IMM Roma, Via Fosso del cavaliere 100, 00133, Roma, Italy. Phone: +39 06 4993 4536
Romolo Marcelli*
Affiliation:
CNR-IMM Roma, Via Fosso del cavaliere 100, 00133, Roma, Italy. Phone: +39 06 4993 4536
Giancarlo Bartolucci
Affiliation:
CNR-IMM Roma, Via Fosso del cavaliere 100, 00133, Roma, Italy. Phone: +39 06 4993 4536 Department of Electronic Engineering, University of Roma “Tor Vergata”, Via del Politecnico 1, 00133 Roma, Italy
Federico Casini
Affiliation:
Department of Electronic Engineering, University of Perugia, Via G. Duranti 93, 06125 Perugia, Italy
Paola Farinelli
Affiliation:
Department of Electronic Engineering, University of Perugia, Via G. Duranti 93, 06125 Perugia, Italy
Giovanni Mannocchi
Affiliation:
THALES ALENIA SPACE Italia, Via Saccomuro 24, 00131 Roma, Italy
Sergio Di Nardo
Affiliation:
THALES ALENIA SPACE Italia, Via Saccomuro 24, 00131 Roma, Italy
Daniele Pochesci
Affiliation:
THALES ALENIA SPACE Italia, Via Saccomuro 24, 00131 Roma, Italy
Benno Margesin
Affiliation:
FBK-Center for Materials and Microsystems – Irst, Via Sommarive 18, Povo 38100, Trento, Italy
Flavio Giacomozzi
Affiliation:
FBK-Center for Materials and Microsystems – Irst, Via Sommarive 18, Povo 38100, Trento, Italy
Olivier Vendier
Affiliation:
THALES ALENIA SPACE France, Toulouse, France
Taeyoung Kim
Affiliation:
Technische Universität München, Arcisstrasse 21, 80333 München, Germany
Larissa Vietzorreck
Affiliation:
Technische Universität München, Arcisstrasse 21, 80333 München, Germany
*
Corresponding author: R. Marcelli Email: Romolo.Marcelli@imm.cnr.it
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Abstract

Two different topologies of radio frequency micro-electro-mechanical system (RF MEMS) series ohmic switches (cantilever and clamped–clamped beams) in coplanar waveguide (CPW) configuration have been characterized by means of DC, environmental, and RF measurements. In particular, on-wafer checks have been followed by RF test after vibration, thermal shocks, and temperature cycles. The devices have been manufactured on high resistivity silicon substrates, as building blocks to be implemented in different single-pole 4-throw (SP4 T), double-pole double-throw (DPDT) configurations, and then integrated in Low Temperature Co-fired Ceramics (LTCC) technology for the realization of large-order Clos 3D networks.

Keywords

ModelingSimulation and characterizations of devices and circuitsPassive components and circuitsRF-MEMS and MOEMSSi-based devices and IC technologies
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Issue 4 , August 2012 , pp. 421 - 433
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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References

REFERENCES

[1]Kang, S.; Kim, H.C.; Chun, K.: Single pole four throw RF MEMS switch with double stop comb drive, In IEEE 21st Int. Conf. on Micro Electro Mechanical Systems, 2008. MEMS 2008, 13–17 January 2008, 1036–1039.Google Scholar
[2]Lucibello, A.; De Angelis, G.; Maiani, M.; Proietti, E.; Marcelli, R.: SU-8 based processes for the realization of RF MEMS structures, in 10th Int. Symp. on RF MEMS and RF Microsystems, MEMSWAVE 2009, Povo, Trento, Italy, 6–8 July 2009, 93–96.Google Scholar
[3]Tan, G.L. et al. : Low loss 2- and 4-bit TTD MEMS phase shifters based on SP4 T switches. IEEE Trans. Microw. Theory Tech., 51 (2001), 297–304.Google Scholar
[4]Muldavin, J.; Bozler, C.; Keast, C.: Wafer-scale packaged RF-MEMS switches, In IEEE MTT-S Int. Microwave Symp. Digest, 2006, 11–16 June 2006, 267–270.CrossRefGoogle Scholar
[5]Lee, J.; Je, c.H.; Kang, S.; Choi, C.-A.: A low-loss single-pole six-throw switch based on compact RF MEMS switches. IEEE Trans. Microw. Theory Tech., 53 (11) (2005), 3335–3344.Google Scholar
[6]Liu, A.Q.; Palei, W.; Tang, M.; Alphones, A.: Single-pole-four-throw switch using high-aspect-ratio lateral switches. Electron. Lett., 40 (18) (2004), 1125–1126.CrossRefGoogle Scholar
[7]Di Nardo, S.; et al. Broadband RF-MEMS based SPDT, in 36th EuMC, European Microwave Conf., Manchester, UK, 10–15 September 2006.CrossRefGoogle Scholar
[8]Yao, J.J.; Chang, M.F.: A surface micromachined miniature switch for telecommunications applications with single frequencies form DC up to 4 GHz, In Dig. of Technical Papers, Transducers'95, Stockholm, Sweden, 25–29 June 1995, vol. 2, 384–387.Google Scholar
[9]Cho, I.; Song, T.; Baek, S.: A low-voltage and low-power RF MEMS switch actuated by combination of electromagnetic and electrostatic forces, In Proc. 34th EuMC 2004, Amsterdam, 11–15 October 2004, vol. 3, 1445–1448.Google Scholar
[10]Hyman, D. et al. : Surface micromachined RF MEMS switches on GaAs substrates. Int. J. RF Microw. Comput.-Aided Eng., 9 (4) (1999), 348–361.3.0.CO;2-K>CrossRefGoogle Scholar
[11]Rebeiz, G.M.: RF MEMS Theory, Design, and Technology, John Wiley and Sons, Hoboken, 2003.Google Scholar
[12]Stark, B.: MEMS Reliability Assurance Guidelines for Space Applications, Editor Jet Propulsion Laboratory, Pasadena, CA, January 1999.Google Scholar
[13]Marcelli, R.; et al. Dielectric charging in microwave micro-electro-mechanical ohmic series and capacitive shunt switches. J. Appl. Phys., 105 (11), 114514-1–114514-10.Google Scholar
[14]Blondy, P.; et al. Dielectric less capacitive MEMS switches, in IEEE MTT-S Int. Microwave Symp. Digest, 6–11 June 2004, vol. 2, 573–576.Google Scholar
[15]Casini, F.; High performance RF-MEMS SP4 T switches in CPW and microstrip technology, in 10th Int. Symp. on RF MEMS and RF Microsystems, MEMSWAVE 2009, Povo, Trento, Italy, 6–8 July 2009, 49–52.Google Scholar
[16]Clos, C.: A study of non-blocking switching networks. Bell Syst. Tech. J., 32 (5) (1953), 406–424.CrossRefGoogle Scholar
[17]Beneš, V. E.: Mathematical Theory of Connecting Networks and Telephone Traffic, Academic Press, 1965, New York and London.Google Scholar
[18]CST GmbH, Germany, CST STUDIO SUITE.Google Scholar
[19]AWR Corporation, USA, Microwave office.Google Scholar
[20]Kim, T.; Faz, M.U.; Vietzorreck, L.: Investigation and optimization of transitions in an LTCC based RF MEMS switching matrix for space applications, Microwave Conf., 2009. APMC 2009, Asia Pacific, 7–10 December 2009, 988–991.CrossRefGoogle Scholar