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Theoretical and experimental development of a high-conversion-efficiency rectifier at X-band

Published online by Cambridge University Press:  09 November 2016

Feifei Tan  and
Changjun Liu
Feifei Tan
Affiliation:
School of Electronics and Information Engineering, Sichuan University, Chengdu 610064, China. Phone: +86-28-85463882
Changjun Liu*
Affiliation:
School of Electronics and Information Engineering, Sichuan University, Chengdu 610064, China. Phone: +86-28-85463882
*
Corresponding author: C. Liu Email: cjliu@ieee.org
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Abstract

Voltage doubler rectifiers are usually applied to systems with high voltage and low current requirement. An X band voltage doubler rectifier has been developed with 72% conversion efficiency. To the best of our knowledge, the obtained rectifying efficiency is the maximum reported to date at X band with Schottky diodes. The working characteristics of the diodes in the voltage doubler rectifier are analyzed in detail. Closed-form equations of diode input impedance and rectifying efficiency are presented and validated using Advanced Design System simulations. The matching network design of the proposed rectifier is based on the closed-form equations. The preliminary rectifying efficiency is predicted by the closed-form equations as well. Measured and simulated results are in good agreement.

Keywords

Microwave power transmissionRectifierSchottky diodeDiode modeling
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 9 , Issue 5 , June 2017 , pp. 985 - 994
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2016 

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