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Toward highly scaled AlN/GaN-on-Silicon devices for millimeter wave applications

Published online by Cambridge University Press:  02 May 2013

Farid Medjdoub ,
Yoann Tagro ,
Bertrand Grimbert ,
Damien Ducatteau  and
Nathalie Rolland
Farid Medjdoub*
Affiliation:
Institute of Electronic, Microelectronic and Nanotechnology (IEMN – CNRS), Villeneuve d'Ascq, France
Yoann Tagro
Affiliation:
Institute of Electronic, Microelectronic and Nanotechnology (IEMN – CNRS), Villeneuve d'Ascq, France
Bertrand Grimbert
Affiliation:
Institute of Electronic, Microelectronic and Nanotechnology (IEMN – CNRS), Villeneuve d'Ascq, France
Damien Ducatteau
Affiliation:
Institute of Electronic, Microelectronic and Nanotechnology (IEMN – CNRS), Villeneuve d'Ascq, France
Nathalie Rolland
Affiliation:
Institute of Electronic, Microelectronic and Nanotechnology (IEMN – CNRS), Villeneuve d'Ascq, France
*
Corresponding author: F. Medjdoub Email: farid.medjdoub@iemn.univ-lille1.fr
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Abstract

In this work, the possibility of achieving GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables us to significantly improve electron confinement under high electric field as compared to single heterostructure while delivering high carrier density (>2 × 1013 cm−2). Subsequently, trapping effects can be minimized resulting in the highest GaN-on-Si output power density up to 40 GHz and at a drain bias of 15 V together with a record fmax close to 200 GHz. At higher bias, infrared camera analysis clearly shows that these devices are mainly limited by self-heating effects. Furthermore, low noise figure has been assessed on this heterostructure, promising integration of cost effective low noise and high power millimeter wave amplifiers.

Keywords

GaN-on-SiMillimeter waveAlN/GaNPower amplifiers
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Special Issue 3: European Microwave Week 2012 , June 2013 , pp. 335 - 340
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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References

REFERENCES

[1]Chyurlia, P.N. et al. : Electron. Lett., 46 (2010), 253.Google Scholar
[2]Awano, Y.; Kosugi, M.; Kosemura, K.; Mimura, T.; Abe, M.: IEEE Trans. Electron Devices, 36 (1989), 2260.CrossRefGoogle Scholar
[3]Jessen, G.H. et al. : IEEE Trans. Electron Devices, 54 (2007), 2589.Google Scholar
[4]Kuzmik, J.: IEEE Electron Device Lett., 22 (2001), 510.Google Scholar
[5]Medjdoub, F. et al. : Proc. IEDM Tech. Dig., San Francisco, 2006.Google Scholar
[6]Medjdoub, F. et al. : Proc. DRC Conf. Dig., South Bend, IN, 2007.Google Scholar
[7]Sun, H. et al. : IEEE Electron Device Lett., 31 (2010), 293.Google Scholar
[8]Medjdoub, F.; Zegaoui, M.; Rolland, N.; Rolland, P.A.: Appl. Phys. Lett., 98 (2011), 223502.Google Scholar
[9]Bahat-Treidel, E.; Hilt, O.; Brunner, F.; Würfl, J.; Tränkle, G.: IEEE Trans. Electron Devices, 55 (2008), 3354.Google Scholar
[10]Micovic, M. et al. : Proc. of IEDM Tech. Dig, San Francisco, 2004, 807.Google Scholar
[11]Ducatteau, D.; Werquin, M.; Grimbert, B.; Morvan, E.; Theron, D.: Proc. IEEE Instrumentation and Measurement Technology Conf., Warsaw, Poland, 2007.Google Scholar
[12]Boudiaf, A.; Laporte, M.: IEEE Trans. Instrum. Meas., 42 (1993), 532.Google Scholar
[13]Fukui, H.: IEEE Trans. Microw. Theory Tech., 27 (1979), 643.Google Scholar
[14]Sanabria, C.; Chakraborty, A.; Xu, H.; Rodwell, M.J.; Mishra, U.K.; York, R.A.: IEEE Electron Device Lett., 27 (2006), 19.Google Scholar