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Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

  • Jérôme Chéron (a1), Michel Campovecchio (a1), Denis Barataud (a1), Tibault Reveyrand (a1), Michel Stanislawiak (a2), Philippe Eudeline (a2) and Didier Floriot (a3)...

Abstract

This paper presents a design method of internally-matched packaged GaN high electron mobility transistors (HEMTs) for achieving not only high-efficiency and high-power performances but also a wide bandwidth and insensitivity to harmonic terminations in the S-band. The package and its internal matching networks are synthesized to confine the second harmonic impedances seen by the GaN die to high-efficiency regions whatever the harmonic impedances presented outside the package. This paper reports the design of a packaged GaN HEMT achieving 78% of power-added-efficiency (PAE) and 25 W of output power at 2.5 GHz. A packaged GaN power bar is also reported with the addition of fundamental matching networks inside the package. In 50 Ω environment, the packaged GaN power bar provided more than 56% of PAE from 2.5 to 3.1 GHz and was desensitized to harmonic load variations with less than two points of PAE variation when a load-pull is performed at second harmonic frequencies outside the package.

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Corresponding author

Corresponding author: M. Campovecchio Email: michel.campovecchio@xlim.fr

References

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Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

  • Jérôme Chéron (a1), Michel Campovecchio (a1), Denis Barataud (a1), Tibault Reveyrand (a1), Michel Stanislawiak (a2), Philippe Eudeline (a2) and Didier Floriot (a3)...

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