Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-25T15:47:15.136Z Has data issue: false hasContentIssue false
  • English
  • Français

Wideband high-efficiency linearized PA design with reduction in memory effects and IMD3

Published online by Cambridge University Press:  12 April 2018

Xuekun Du ,
Chang Jiang You ,
Yulong Zhao ,
Xiang Li ,
Mohamed Helaoui ,
Jingye Cai  and
Fadhel M. Ghannouchi
Xuekun Du*
Affiliation:
University of Electronic Science and Technology of China, 611731 ChengduChina Intelligent RF Radio Laboratory, Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB T2N 1N4, Canada
Chang Jiang You
Affiliation:
University of Electronic Science and Technology of China, 611731 ChengduChina
Yulong Zhao
Affiliation:
Intelligent RF Radio Laboratory, Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB T2N 1N4, Canada
Xiang Li
Affiliation:
Intelligent RF Radio Laboratory, Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB T2N 1N4, Canada
Mohamed Helaoui
Affiliation:
Intelligent RF Radio Laboratory, Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB T2N 1N4, Canada
Jingye Cai
Affiliation:
University of Electronic Science and Technology of China, 611731 ChengduChina
Fadhel M. Ghannouchi*
Affiliation:
Intelligent RF Radio Laboratory, Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB T2N 1N4, Canada
*
Author for correspondence: Xuekun Du, E-mail: duxuekun@163.com and Fadhel M. Ghannouchi, E-mail: fghannou@ucalgary.ca
Author for correspondence: Xuekun Du, E-mail: duxuekun@163.com and Fadhel M. Ghannouchi, E-mail: fghannou@ucalgary.ca
Get access Rights & Permissions [Opens in a new window]

Abstract

An analytical method is proposed to reduce the memory effects and third-order intermodulation distortions for improving the linearity of wideband power amplifier (PA). An excellent linearity can be obtained by reducing the second-harmonic output power levels and reducing the envelope voltage components in the megahertz range. An improved wideband Chebyshev low-pass matching network including the bias network is analyzed and designed to validate the proposed method. The measured results indicate that a wideband high-efficiency linearized PA is realized from 1.35 to 2.45 GHz (fractional bandwidth = 58%) with power added efficiency of 60–78%, power gain of 10.8–12.3 dB, and output power of 40.0–41.2 dBm. For a 20 MHz LTE modulated signal, the adjacent channel leakage ratios (ACLRs) of the proposed PA with digital pre-distortion (DPD) linearization are −55.7 ~ −53.9 dBc across 1.5–2.4 GHz at an average output power of 32.4–33.6 dBm. For a 40 MHz two-carrier LTE modulated signal, the ACLRs of the proposed PA with DPD linearization are −51.1 ~ −48.2 dBc at an average output power of ~30.5 dBm in the frequency range from 1.5 GHz to 2.4 GHz.

Keywords

Active circuitspower amplifiers
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 10 , Issue 4 , May 2018 , pp. 391 - 400
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2018 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Saad, P, Fager, C, Cao, H, Zirath, H and Andersson, K (2010) Design of a highly efficient 2–4 GHz octave bandwidth GaN-HEMT power amplifier. IEEE Transactions on Microwave Theory and Techniques 58, 1677–1685.CrossRefGoogle Scholar
2.Ding, X, He, S, You, F, Xie, S and Hu, Z (2013) 2–4 GHz wideband power amplifier with ultra-flat gain and high PAE. Electronics Letters 49, 326–327.CrossRefGoogle Scholar
3.Arnous, MT, Zhang, Z, Barbin, SE and Boeck, G (2017) A novel design approach for highly efficient multi-octave bandwidth GaN power amplifiers. IEEE Microwave Wireless Components Letters 27, 371–373.CrossRefGoogle Scholar
4.Shi, W, He, S, Li, Q, Qi, T and Liu, Q (2016) Design of broadband power amplifiers based on resistive-reactive series of continuous modes. IEEE Microwave Wireless Components Letters 26, 519–521.CrossRefGoogle Scholar
5.Tuffy, N, Guan, L, Zhu, A and Brazil, TJ (2012) A simplified broadband design methodology for linearized high-efficiency continuous Class-F power amplifiers. IEEE Transactions on Microwave Theory and Techniques 60, 1952–1963.CrossRefGoogle Scholar
6.Vuolevi, J and Rahkonen, T (2003) Distortion in RF Power Amplifiers. Norwood, MA: Artech House.Google Scholar
7.Liu, T, Boumaiza, S, Sesay, AB and Ghannouchi, FM (2007) Quantitative measurements of memory effects in wideband RF power amplifiers driven by modulated signals. IEEE Microwave Wireless Components Letters 17, 79–81.CrossRefGoogle Scholar
8.Ghannouchi, FM, Hammi, O and Helaoui, M (2015) Behavioral Modeling and Predistortion of Wideband Wireless Transmitters, Hoboken, NJ: John Wiley & Sons.CrossRefGoogle Scholar
9.Kim, J, Moon, J, Kim, I, Kim, J and Kim, B (2009) Synergistic digital predistorter based on a low memory power amplifier for wideband linearization. Microwave and Optical Technology Letters 51, 1548–1552.CrossRefGoogle Scholar
10.Lee, Y-S, Lee, M-W, Kam, S-H and Jeong, Y-H (2010) A high-linearity wideband power amplifier with cascaded third-order analog predistorters. IEEE Microwave Wireless Components Letters 20, 112–114.CrossRefGoogle Scholar
11.Ladhani, H, Jones, JK and Bouisse, G (2011) Improvements in the instantaneous-bandwidth capability of RF power transistors using in-package high-k capacitors. IEEE MTT-S International Microwave Symposium Digest, Baltimore.CrossRefGoogle Scholar
12.Chen, K and Peroulis, D (2011) Design of highly efficient broadband class-E power amplifier using synthesized low-pass matching networks. IEEE Transactions on Microwave Theory and Techniques 59, 3162–3173.CrossRefGoogle Scholar
13.Matthaei, GL (1964) Tables of Chebyshev impedance transformation networks of low-pass filter form. IEEE Transactions on Microwave Theory and Techniques 52, 939–963.Google Scholar
14.Ghannouchi, FM and Hammi, O (2009) Behavioral modeling and predistortion. IEEE Microwave Magazine 10, 52–64.CrossRefGoogle Scholar
15.Morgan, DR, Ma, Z, Kim, J, Zierdt, MG and Pastalan, J (2006) A generalized memory polynomial model for digital predistortion of RF power amplifiers. IEEE Transactions on Signal Processing 54, 3852–3860.CrossRefGoogle Scholar
16.Yang, M, Xia, J, Guo, Y and Zhu, A (2016) Highly efficient broadband continuous inverse Class-F power amplifier design using modified elliptic low-pass filtering matching network. IEEE Transactions on Microwave Theory and Techniques 64, 1515–1525.CrossRefGoogle Scholar