This special issue aims to provide readers with the latest advancements and trends in wide band-gap GaN-based transistor technology for high frequency operation. It will cover all topics of GaN high-frequency transistor technology development, such as, TCAD simulation, electro-thermal compact modelling, measurement techniques and design, fulfilling the future requirements of many applications. TCAD simulations, closely associated to a set of measurements, should allow us to understand, explain and precisely locate the trapping charge in the semi-conductor layers, for proposing relevant technological improvements. In addition, nonlinear advanced electro-thermal compact modelling should help in the design and optimization of linear and nonlinear circuits.
The topics invited for inclusion are, but not limited to:
- GaN Technology
- Physics-based Device Modelling and Simulation
- Thermal simulation
- Compact Modelling
- Measurement techniques
- High Frequency Active circuits and power amplifier modules
Guest Editors
Prof. Jean-Christophe Nallatamby, XLIM – UMR CNRS 7252
RF Systems,
Non Linear Components Circuits and Systems, University of Limoges, Brive, France
Email: jean-christophe.nallatamby@unilim.fr
Prof. Nandita DasGupta, Microelectronics and MEMS Laboratory,
Department of Electrical Engineering, IIT Madras, Chennai - India
Email: nand@ee.iitm.ac.in
Prof. Jose Carlos Pedro , Instituto de Telecomunicações
University of Aveiro, Portugal
Email: jcpedro@ua.pt
Deadline for manuscript submissions: 30th June, 2021.
All articles should be submitted via the online submission system at: https://mc.manuscriptcentral.com/mrf. Please select "GaN-Based Transistors for High-Frequency Applications" from the drop-down menu under "Special Issue" when submitting manuscript.