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An investigation of the creep processes in tin and aluminum using a depth-sensing indentation technique

Published online by Cambridge University Press:  31 January 2011

V. Raman  and
R. Berriche
V. Raman
Affiliation:
IBM Storage Systems Products Division, San Jose, California 95193
R. Berriche
Affiliation:
Department of Geology and Geophysics, University of Minnesota, Minneapolis, Minnesota 55455
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Abstract

Constant load creep experiments were conducted using a depth-sensing indentation instrument with indentation depths in the submicron range. Experiments were conducted on polycrystalline Sn and sputtered Al films on Si substrates. The results show that the plastic depth versus time curves and the strain rate versus stress plots from these experiments are analogous to those obtained from conventional creep experiments using bulk specimens. The value of the stress exponent for Sn is close to the reported values from uniaxial creep tests. Tests on Al films showed that the stress exponent is dependent on the indentation depth and is governed by the proximity to the film/substrate interface. Load change experiments were also performed and the data from these tests were analyzed. It is concluded that indentation creep experiments may be useful in elucidating the deformation properties of materials and in identifying deformation mechanisms.

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Articles
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Journal of Materials Research , Volume 7 , Issue 3 , March 1992 , pp. 627 - 638
Copyright
Copyright © Materials Research Society 1992

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