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Atomic structure, electrical properties, and infrared range optical properties of diamondlike carbon films containing foreign atoms prepared by pulsed laser deposition

Published online by Cambridge University Press:  31 January 2011

Q. Wei ,
J. Sankar ,
A. K. Sharma ,
S. Oktyabrsky ,
J. Narayan  and
R. J. Narayan
Q. Wei
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Mechanical Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411
J. Sankar
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Mechanical Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411
A. K. Sharma
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
S. Oktyabrsky
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–7916
R. J. Narayan
Affiliation:
Department of Medicine, Wake Forest University, Winston Salem, North Carolina 27106
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Abstract

We investigated the atomic structure, electrical, and infrared range optical properties of diamondlike carbon (DLC) films containing alloy atoms (Cu, Ti, or Si) prepared by pulsed laser deposition. Radial distribution function (RDF) analysis of these films showed that they are largely sp3 bonded. Both pure DLC and DLC + Cu films form a Schottky barrier with the measuring probe, whereas DLC + Ti films behave like a linear resistor. Pure DLC films and those containing Cu exhibit p-type conduction, and those containing Ti and Si have n-type conduction. Photon-induced conduction is observed for pure DLC, and the mechanism is discussed in terms of low-density gap states of highly tetrahedral DLC. Our results are consistent with relative absence of gap states in pure DLC, in accordance with theoretical prediction by Drabold et al.37 Temperature dependence of conductivity of DLC + Cu shows a behavior σ ∞ exp(−B/T1/2), instead of the T−1/4 law (Mott–Davis law). Contributions from band-to-band transitions, free carriers, and phonons to the emissivity spectrum are clearly identified in pure DLC films. The amorphous state introduces a large contribution from localized states. Incorporation of a small amount of Si in the DLC does not change the general feature of emissivity spectrum but enhances the contribution from the localized states. Cu and Ti both enhance the free carrier and the localized state contributions and make the films a black body.

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Articles
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Journal of Materials Research , Volume 15 , Issue 3 , March 2000 , pp. 633 - 641
Copyright
Copyright © Materials Research Society 2000

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