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Deposition of fine silicon carbide relics by electrostatic atomization of a polymeric precursor

Published online by Cambridge University Press:  31 January 2011

D. A. Grigoriev ,
M. J. Edirisinghe  and
X. Bao
D. A. Grigoriev
Affiliation:
Department of Materials, Queen Mary, University of London, Mile End Road, London E1 4NS, United Kingdom
M. J. Edirisinghe*
Affiliation:
Department of Materials, Queen Mary, University of London, Mile End Road, London E1 4NS, United Kingdom
X. Bao
Affiliation:
Department of Materials, Queen Mary, University of London, Mile End Road, London E1 4NS, United Kingdom
*
b) Address all correspondence to this author. e-mail: m.j.edirisinghe@gmul.ac.uk
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Abstract

A solution of a polymeric precursor for silicon carbide (SiC) was subjected to electrostatic atomization in the cone-jet mode to spray droplets on a zirconia substrate. The resulting deposit was heated to 1300 °C to obtain SiC relics. Precursor and ceramic relics were characterized by microscopy. The size distribution of the droplet relics was studied at several flow rates of the solution to the electrostatic atomization chamber. The results show that by controlling the flow rate SiC relics approximately 5 μm in diameter can be produced.

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Type
Articles
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Journal of Materials Research , Volume 17 , Issue 2 , February 2002 , pp. 487 - 491
Copyright
Copyright © Materials Research Society 2002

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