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Effect of annealing temperature on the electrical characteristics of Ti–Zn–Sn–O thin-film transistors fabricated via a solution process

Published online by Cambridge University Press:  18 May 2012

Jong Chil Do ,
Ho Beom Kim ,
Cheol Hyoun Ahn ,
Hyung Koun Cho  and
Ho Seong Lee
Jong Chil Do
Affiliation:
School of Materials Science and Engineering, Kyungpook National University, Daegu 702-701, Korea
Ho Beom Kim
Affiliation:
School of Materials Science and Engineering, Kyungpook National University, Daegu 702-701, Korea
Cheol Hyoun Ahn
Affiliation:
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
Hyung Koun Cho
Affiliation:
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
Ho Seong Lee*
Affiliation:
School of Materials Science and Engineering, Kyungpook National University, Daegu 702-701, Korea
*
a)Address all correspondence to this author. e-mail: hs.lee@knu.ac.kr
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Abstract

Thin-film transistors (TFTs) utilizing a TiZnSnO (TZTO) channel layer were fabricated by using a solution process. The effect of annealing temperature on the device performance of the TZTO TFTs was investigated. TFTs with nanocrystalline TZTO films exhibited a better device performance than those with amorphous TZTO films. The on/off current ratio of the TZTO TFTs annealed at 600 °C was as large as 4.2 × 106. The field-effect mobility (μFE) of 4.1 cm2/Vs and subthreshold swing of 1.2 V/decade were achieved.

Keywords

sol–geloxideelectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 27 , Issue 17: Focus Issue: Oxide Semiconductors , 14 September 2012 , pp. 2293 - 2298
Copyright
Copyright © Materials Research Society 2012

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