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The effect of annealing temperature on the structural, optical, and electrical properties of CdS films

Published online by Cambridge University Press:  31 January 2011

Hulya Metin*
Affiliation:
Mersin University, Department of Physics, Mersin, 33343 Turkey
Mehmet Ari
Affiliation:
Erciyes University, Department of Physics, Kayseri, 38039 Turkey
Selma Erat
Affiliation:
Laboratory for High Performance Ceramics EMPA—Swiss Federal Laboratories for Materials Testing & Research, CH-8600 Dübendorf, Switzerland; and Department of Materials, Nonmetallic Inorganic Materials ETH Zurich—Swiss Federal Institute of Technology, CH-8093 Zurich, Switzerland
Mehmet Bozoklu
Affiliation:
Erciyes University, Department of Physics, Kayseri, 38039 Turkey
Artur Braun*
Affiliation:
Laboratory for High Performance Ceramics EMPA—Swiss Federal Laboratories for Materials Testing & Research, CH-8600 Dübendorf, Switzerland
*
a)Address all correspondence to this author. e-mail: hmetin@mersin.edu.tr
b)Address all correspondence to this author. e-mail: Artur.Braun@empa.ch
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Abstract

Cadmium sulfide (CdS) photocatalyst films were grown on glass by chemical bath deposition (pH 9.4, 70 °C) and then annealed in nitrogen from 423 K to 823 K in steps of 100 K. The XRD crystallite size increases in a sigmoidal manner from 60 nm to 100 nm while the optical band gap energy decreases from 2.42 eV to 2.28 eV. This trend is paralleled by the decreasing Urbach energy, but only up to 623 K, where it increases again. This is the temperature where the Cd effectively surpasses the phase transformation from cubic to hexagonal, and the activation energy for electronic transport drops by a factor of nearly two.

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Articles
Copyright
Copyright © Materials Research Society 2010

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