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Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - boron nitride heterostructures

Published online by Cambridge University Press:  06 January 2016

Milinda Wasala
Affiliation:
Department of Physics, Southern Illinois University Carbondale, Carbondale, Illinois 62901, USA
Jie Zhang
Affiliation:
Department of Physics, Southern Illinois University Carbondale, Carbondale, Illinois 62901, USA
Sujoy Ghosh
Affiliation:
Department of Physics, Southern Illinois University Carbondale, Carbondale, Illinois 62901, USA
Baleeswaraiah Muchharla
Affiliation:
Department of Physics, Southern Illinois University Carbondale, Carbondale, Illinois 62901, USA
Rachel Malecek
Affiliation:
Department of Physics, Southern Illinois University Carbondale, Carbondale, Illinois 62901, USA
Dipanjan Mazumdar
Affiliation:
Department of Physics, Southern Illinois University Carbondale, Carbondale, Illinois 62901, USA
Hassana Samassekou
Affiliation:
Department of Physics, Southern Illinois University Carbondale, Carbondale, Illinois 62901, USA
Moses Gaither-Ganim
Affiliation:
Department of Physics, Southern Illinois University Carbondale, Carbondale, Illinois 62901, USA
Andrew Morrison
Affiliation:
Department of Physics, Southern Illinois University Carbondale, Carbondale, Illinois 62901, USA
Nestor-Perera Lopez
Affiliation:
Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Victor Carozo
Affiliation:
Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Zhong Lin
Affiliation:
Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Mauricio Terrones
Affiliation:
Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, USA; and Department of Chemistry and Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Saikat Talapatra*
Affiliation:
Department of Physics, Southern Illinois University Carbondale, Carbondale, Illinois 62901, USA
*
a)Address all correspondence to this author. e-mail: stalapatra@physics.siu.edu
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Abstract

Here we report on the photocurrent response of two-dimensional (2D) heterostructures of sputtered MoS2 on boron nitride (BN) deposited on (001)-oriented Si substrates. The steady state photocurrent (Iph) measurements used a continuous laser of λ = 658 nm (E = 1.88 eV) over a broad range of laser intensities, P (∼1 μW < P < 10 μW), and indicate that Iph obtained from MoS2 layers with the 80 nm BN under layer was ∼4 times higher than that obtained from MoS2 layers with the 30 nm BN under layer. We also found super linear dependence of Iph on P (IphPγ, with γ > 1) in both the samples. The responsivities obtained over the range of laser intensity studied were in the order of mA/W (∼12 and ∼2.7 mA/W with 80 nm BN and 30 nm BN under layers, respectively). These investigations provide crucial insight into the optical activity of MoS2 on BN, which could be useful for developing a variety of optoelectronic applications with MoS2 or other 2D transition metal dichalcogenide heterostructures.

Type
Invited Articles
Copyright
Copyright © Materials Research Society 2016 

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References

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