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Epitaxial growth of Mn-doped γ-Ga2O3 on spinel substrate

Published online by Cambridge University Press:  28 February 2011

Hiroyuki Hayashi*
Affiliation:
Department of Materials Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan
Rong Huang
Affiliation:
Nanostructures Research Laboratory, Japan Fine Ceramics Center, Atsuta, Nagoya 456-8587, Japan; and Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200062, China
Fumiyasu Oba*
Affiliation:
Department of Materials Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan
Tsukasa Hirayama
Affiliation:
Nanostructures Research Laboratory, Japan Fine Ceramics Center, Atsuta, Nagoya 456-8587, Japan
Isao Tanaka
Affiliation:
Department of Materials Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan; and Nanostructures Research Laboratory, Japan Fine Ceramics Center, Atsuta, Nagoya 456-8587, Japan
*
a)Address all correspondence to these authors. e-mail: hayashi@cms.mtl.kyoto-u.ac.jp
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Abstract

Mn-doped γ-Ga2O3 thin films with a defective spinel structure have been epitaxially grown on spinel (100) substrates using pulsed laser deposition. The crystal quality of the films is strongly dependent on preparation conditions, particularly substrate temperature and laser energy density, as well as Mn concentration. In the 7 cation% Mn-doped film grown under the optimized conditions, the full width at half maximum in the x-ray diffraction rocking curve for the (400) plane is 117 arcsec and the root-mean-square roughness of the surface is approximately 0.4 nm. These values are comparable to those of the spinel substrate. The film shows a uniform tetragonal distortion with a tetragonality of 1.05.

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Articles
Copyright
Copyright © Materials Research Society 2011

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