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Heteroepitaxy of diamond on c-BN: Growth mechanisms and defect characterization

Published online by Cambridge University Press:  03 March 2011

Alberto Argoitia ,
John C. Angus ,
Jing S. Ma ,
Long Wang ,
Pirouz Pirouz  and
Walter R.L. Lambrecht
Alberto Argoitia
Affiliation:
Department of Chemical Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7217
John C. Angus
Affiliation:
Department of Chemical Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7217
Jing S. Ma
Affiliation:
Department of Chemical Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7217
Long Wang
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7217
Pirouz Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7217
Walter R.L. Lambrecht
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106-7217
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Abstract

Diamond films grown on {100}, {111} boron-terminated, and nitrogen-terminated facets of cubic boron nitride (c-BN) single crystals were characterized by Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The evolution of morphology and microstructure of the diamond films at different stages during the growth process were followed by SEM investigation. The results indicate that diamond growth proceeds by nucleation of oriented three-dimensional islands followed by their coalescence. Cross-sectional TEM specimens were prepared from thick (over 10 μm) continuous diamond films grown on {111} boron-terminated surfaces. Selected-area diffraction and high resolution TEM images show that the diamond film has a parallel orientation relationship with respect to the substrate. Characteristic defects, common to diamond films obtained by chemical vapor deposition on other substrates, are also discussed.

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Articles
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Journal of Materials Research , Volume 9 , Issue 7 , July 1994 , pp. 1849 - 1865
Copyright
Copyright © Materials Research Society 1994

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