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High-resolution Electron Microscopy Observation of Grain-boundary Films in Superplastically Deformed Silicon Nitride

Published online by Cambridge University Press:  31 January 2011

Guo-Dong Zhan*
Affiliation:
National Institute for Research in Inorganic Materials, Ibaraki 305–0044, Japan
Mamoru Mitomo
Affiliation:
National Institute for Research in Inorganic Materials, Ibaraki 305–0044, Japan
Yuichi Ikuhara
Affiliation:
Department of Materials Science, University of Tokyo, Bunkyo-ku Hongo 7–3-1, Tokyo, Japan
Taketo Sakuma
Affiliation:
Department of Materials Science, University of Tokyo, Bunkyo-ku Hongo 7–3-1, Tokyo, Japan
*
a)Address all correspondence to this author. e-mail: gdzhan@nirim.go.jp
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Abstract

The thickness distribution of grain-boundary films during the superplastic deformation of fine-grained β–silicon nitride was investigated by high-resolution electron microscopy. In particular, grain-boundary thickness was considered with respect to the stress axis in two orientations; namely, parallel and perpendicular to the direction of applied stress. The results showed that the thickness distribution in boundaries perpendicular to the direction of applied stress was unimodal, whereas in parallel boundaries it was bimodal. Moreover, it was found that the majority of film-free boundaries were parallel to the direction of applied stress in the extremely deformed sample. The variation in spacing reflects distribution of stresses within the material due to irregular shape of the grains and the existence of percolating load-bearing paths through the microstructure.

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Copyright © Materials Research Society 2000

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High-resolution Electron Microscopy Observation of Grain-boundary Films in Superplastically Deformed Silicon Nitride
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