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Intermetal dielectric process using spin-on glass for ferroelectric memory devices having SrBi2Ta2O9 capacitors

Published online by Cambridge University Press:  31 January 2011

Suk-Kyoung Hong ,
Yang Han Yoon ,
Yong Ku Baek ,
Chang Goo Lee ,
Chung Won Suh ,
Seok Won Lee ,
Young Min Kang ,
Nam Soo Kang ,
Cheol Seong Hwang  and
Oh Seong Kwon
Suk-Kyoung Hong*
Affiliation:
FeRAM Technology, Memory R–1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467–701 Korea
Yang Han Yoon
Affiliation:
Process Development Thin-Film, Memory R–1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467–701 Korea
Yong Ku Baek
Affiliation:
FeRAM Technology, Memory R–1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467–701 Korea
Chang Goo Lee
Affiliation:
FeRAM Technology, Memory R–1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467–701 Korea
Chung Won Suh
Affiliation:
FeRAM Technology, Memory R–1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467–701 Korea
Seok Won Lee
Affiliation:
FeRAM Technology, Memory R–1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467–701 Korea
Young Min Kang
Affiliation:
FeRAM Technology, Memory R–1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467–701 Korea
Nam Soo Kang
Affiliation:
FeRAM Technology, Memory R–1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467–701 Korea
Cheol Seong Hwang*
Affiliation:
School of Material Science and Engineering, Seoul National University, San #56–1 Shillim-dong, Kwanak-ku, Seoul, 151–742, Korea
Oh Seong Kwon
Affiliation:
School of Material Science and Engineering, Seoul National University, San #56–1 Shillim-dong, Kwanak-ku, Seoul, 151–742, Korea
*
a)skkhong@sr.hei.co.kr
b)cheolsh@plaza.snu.ac.kr
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Abstract

The degradation behavior of integrated Pt/SrBi2Ta2O9/Pt capacitors caused by hydrogen impregnation during the spin-on glass (SOG)-based intermetal dielectric (IMD) process was investigated. SOG was tested as an IMD since it offers better planarity for multilevel metallization processes compared to other SiO2 deposition methods. It was found that the SOG itself does not degrade the ferroelectric performance. Deposition of an under-layer of SiOxNy by plasma-enhanced chemical vapor deposition (PECVD) using SiH4 + N2O + N2 source gases and a SiO2?x capping layer by another PECVD process using SiH4 + N2O source gases produced hydrogen as a reaction by-product. The hydrogen diffused into the SBT layer and degraded the ferroelectric performance during subsequent annealing cycles. A very thin (10 nm) Al2O3 layer grown by atomic layer deposition before the IMD process successfully blocked the impregnation of the hydrogen. Therefore, excellent ferroelectric performance of the SBT capacitors were maintained after the multilevel metallization process as well as passivation. The adoption of SOG in the IMD process greatly improved the surface flatness of the wafer resulting in a higher capacitor yield with very good uniformity in ferroelectric properties over the 8-in.-diameter wafer.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 12 , December 2000 , pp. 2822 - 2829
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1.Hong, S.K., Baek, Y.K., Yang, B., Kang, Y.M., Lee, C.G., Suh, C.W., and Kang, N.S., in Proc. 7th Int. Workshop on Advanced LSI's and Devices, July 22–24, 1999, (IEEK, Bokwang, Korea, 1999), p. 343.Google Scholar
2.Kwon, O.S., Hwang, C.S., and Hong, S.K., Appl. Phys. Lett. 75, 558 (1999).CrossRefGoogle Scholar
3.Hong, S.K., Hwang, C.S., Kwon, O.S., and Kang, N.S., Appl. Phys. Lett. 76, 324 (2000).CrossRefGoogle Scholar
4.Kanehara, T., Koiwa, I., Okada, Y., Ashikaga, K., Katoh, H., and Kaifu, K., in Proc. Int. Electron Devices Meet., (IEEE, New York, 1997), p. 601.Google Scholar
5.Zafar, S., Kaushik, V., Laberge, P., Chu, P., Jones, R.E., Hance, R.L., Zurcher, P., White, B.E., Taylor, D., Melnick, B., and Gillespie, S., J. Appl. Phys. 82, 4469 (1997).CrossRefGoogle Scholar
6.Hase, T., Noguchi, T., and Miyasaka, Y., Integr. Ferroelectric 16, 29 (1997).CrossRefGoogle Scholar
7.Hong, S.K., Suh, C.W., Lee, C.G., Lee, S.W., Kang, E.Y., Kang, N.S., Hwang, C.S., and Kwon, O.S., Appl. Phys. Lett. 77, 76 (2000).CrossRefGoogle Scholar
8.Shimamoto, Y., Kushida-Abdelghafar, K., Miki, H., and Fujsaki, Y., Appl. Phys. Lett. 70, 3096 (1997).CrossRefGoogle Scholar
9.Warren, W.L., Dimos, D., Tuttle, B.A., Pike, G.E., and Al-Shareef, H.N., Integr. Ferroelectric 16, 77 (1997).CrossRefGoogle Scholar
10.Sadashivan, S., Aggarwal, S., Song, T.K., Ramesh, R., Evans, J.T. Jr, Tuttle, B.A., Warren, W.L., and Dimos, D., J. Appl. Phys. 83, 2165 (1998).CrossRefGoogle Scholar
11.Colla, E.L., Kholkin, A.L., Taylor, D., Tagantsev, A.K., Brooks, K.G., and Setter, N., Microelectronics Engineering 29, 145 (1995).CrossRefGoogle Scholar
12.Furuya, A. and Cuchiaro, J.D., J. Appl. Phys. 84, 6788 (1998).CrossRefGoogle Scholar
13.Im, J., Auciello, O., Krauss, A.R., Gruen, D.M., Chang, R.P.H, Kim, S.H., and Kingon, A.I., Appl. Phys. Lett. 74, 1162 (1999).CrossRefGoogle Scholar
14.Han, J-P. and Ma, T.P., Appl. Phys. Lett. 71, 1267 (1997).CrossRefGoogle Scholar
15.Park, I.S., Kim, Y.K., Lee, S.M., Chung, J.H., Kang, S.B., Park, C.S., Yoo, C.Y., Lee, S.I., and Lee, M.Y., in Proc. Int. Electron Devices Meet., (IEEE, New York, 1997), p. 617.Google Scholar