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Microstructural development of SCS-6 SiC fibers during high temperature creep

Published online by Cambridge University Press:  31 January 2011

Lucille A. Giannuzzi ,
Charles A. Lewinsohn ,
Charles E. Bakis  and
Richard E. Tressler
Lucille A. Giannuzzi
Affiliation:
Center for Advanced Materials, The Pennsylvania State University, University Park, Pennsylvania 16802
Charles A. Lewinsohn
Affiliation:
Center for Advanced Materials, The Pennsylvania State University, University Park, Pennsylvania 16802
Charles E. Bakis
Affiliation:
Center for Advanced Materials, The Pennsylvania State University, University Park, Pennsylvania 16802
Richard E. Tressler
Affiliation:
Center for Advanced Materials, The Pennsylvania State University, University Park, Pennsylvania 16802
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Microstructural development of SCS-6 SiC fibers induced by creep deformation at 1400 °C is presented. Grain growth occurs in all SiC regions of the fiber during creep. Portions of the SiC4 region transform from βSiC to αSiC growing at the expense of the βSiC. The SiC1 through SiC3 regions of the fiber consist of a distinct (C + βSiC) two-phase region. The grain growth of the βSiC grains in the two-phase region is not as extensive as in the SiC4 region, suggesting that the presence of excess carbon may inhibit the growth of βSiC.

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Articles
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Journal of Materials Research , Volume 13 , Issue 7 , July 1998 , pp. 1853 - 1860
Copyright
Copyright © Materials Research Society 1998

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