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New preparation process of Pb(ZrxTi1−x)O3 thin films from PbZrO3 and PbTiO3 multilayers

Published online by Cambridge University Press:  31 January 2011

Gang He
Affiliation:
AIST Tohoku, National Institute of Advanced Industrial Science and Technology (AIST) 4–2–1 Nigatake, Miyagino-ku, Sendai 983–8551, Japan
Takashi Iijima
Affiliation:
Smart Structure Research Center, AIST, Tsukuba Central 2, 1–1–1 Umezono, Tsukuba 305–8563, Japan
H. Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduated School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, 226–8502, Japan
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Abstract

This work presents the preliminary experimental results of Pb(ZrxTi1−x)O3 (PZT) thin films preparation to develop a new combinatorial process by chemical solution deposition (CSD) method. PZT thin films were fabricated from the PbZrO3 (PZ) and PbTiO3 (PT) multilayers on a substrate of Si/SiO2/Ti/Pt. The precursor PT and PZ solutions were coated in different sequences, (i) in the PT start sequence and (ii) in the PZ start sequence, and with different PT and PZ concentrations. It was found that the deposition sequence of PT and PZ led to the differences in composition, microstructure, texture, and ferroelectric property of the resultant thin films. The PT start deposition was suitable for preparation of the PZT thin films, while the PZ start deposition caused composition deviation and bad ferroelectric property. The postannealing had little effect for the formation of the PZT thin films from the multi-PT and PZ layers. A single perovskite phase of PZT can be obtained from the deposited multi-PT and PZ layers even without any postannealing when concentrations of the precursor PT and PZ solution are smaller than 0.025 M and the deposition sequence is in the PT start sequence. This method would be a constructive way to develop and study other thin film materials systems.

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Articles
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1.Xiang, X-D., Sun, X., Briceno, G., Lou, Y., Wang, K-A., Chang, H., Wallace-Freedman, W.G., Chen, S-W., Schultz, P.G., Science 268, 1738 (1995).CrossRefGoogle Scholar
2.Takeuchi, I., Chang, H., Gao, C., Schultz, P.G., and Xiang, X-D., Appl. Phys. Lett. 73, 894 (1998).CrossRefGoogle Scholar
3.Briceño, G., Chang, H., Sun, X., Shultz, P.G., Xiang, X-D., Science 270, 273 (1995).CrossRefGoogle Scholar
4.Chang, H., Gao, C., Takeuchi, I., Yoo, Y., Wang, J., Shultz, P.G., Xiang, X-D., Sharma, R.P., Downes, M., and Ventakatesan, T., Appl. Phys. Lett. 72, 2185 (1998).CrossRefGoogle Scholar
5.Wang, J., Yoo, Y., Gao, C., Takeuchi, I., Sun, X., Chang, H., Xiang, X-D., and Schultz, P.G., Science 279, 1712 (1998).CrossRefGoogle Scholar
6.Matsumoto, Y., Murakami, M., Jin, Z-W., Ohtomo, A., Lippmaa, M., Kawasaki, M., and Koiuma, H., Jpn. J. Appl. Phys. 38, L603 (1999).Google Scholar
7.Ohya, Y., Ito, T., and Takahashi, Y., Jpn. J. Appl. Phys. 33, 5272 (1994).CrossRefGoogle Scholar
8.Ansari, P.H. and Safari, A., in Ferroelectric Thin Films III, edited by Meyers, E.R., Tuttle, B.A., Desu, S.B., and Larsen, P.K. (Mat. Res. Soc. Symp. Proc. 310, Pittsburgh, PA, 1993), p. 467.Google Scholar
9.Cattan, E., Roma, R., Velu, G., Jaber, B., Remiens, D., and Thierry, B., in Ferroelectric Thin Films V, edited by Desu, S.B., Ramesh, R., Tuttle, B.A., Jones, R.E., and Yoo, I.K. (Mater. Res. Soc. Symp. Proc. 433, Pittsburgh, PA, 1996), p. 291.Google Scholar
10.Shimizu, M., Sugiyama, M., Fujisawa, H., and Shiosaki, T., Jpn. J. Appl. Phys. 33, 5167 (1994).CrossRefGoogle Scholar
11.Doi, H., Atsuki, T., Soyama, N., Sasaki, G., Yonezawa, T., and Ogi, K., Jpn. J. Appl. Phys. 33, 5159 (1994).CrossRefGoogle Scholar
12.Suzuki, H., Othman, M.B., Murakami, K., Kaneko, S., and Hayashi, T., Jpn. J. App. Phys. 35, 4896 (1996).CrossRefGoogle Scholar
13.Suzuki, H., Kaneko, S., Murakami, K., and Hayashi, T., Jpn. J. Appl. Phys. 36, 5803 (1997).CrossRefGoogle Scholar