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Optimization of PbTiO3 seed layers and Pt metallization for PZT-based piezoMEMS actuators

Published online by Cambridge University Press:  19 July 2013

Luz M. Sanchez ,
Daniel M. Potrepka ,
Glen R. Fox ,
Ichiro Takeuchi ,
Ke Wang ,
Leonid A. Bendersky  and
Ronald G. Polcawich
Luz M. Sanchez*
Affiliation:
RF MEMS & mm-Scale Robotics, U.S. Army Research Laboratory, Adelphi, Maryland 20783; and Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742
Daniel M. Potrepka
Affiliation:
RF MEMS & mm-Scale Robotics, U.S. Army Research Laboratory, Adelphi, Maryland 20783
Glen R. Fox
Affiliation:
Fox Materials Consulting LLC, Colorado Spring, Colorado 80908
Ichiro Takeuchi
Affiliation:
Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742
Ke Wang
Affiliation:
Metallurgy Division, NIST, Gaithersburg, Maryland 20886
Leonid A. Bendersky
Affiliation:
Metallurgy Division, NIST, Gaithersburg, Maryland 20886
Ronald G. Polcawich
Affiliation:
RF MEMS & mm-Scale Robotics, U.S. Army Research Laboratory, Adelphi, Maryland 20783
*
a) Address all correspondence to this author. e-mail: Luz.Sanchez1@us.army.mil
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Abstract

This work attempts to optimize past research results on lead zirconate titanate (PZT) using the fabrication processes at the U.S. Army Research Laboratory so as to achieve a high degree of {001} texture and improved piezoelectric properties. A comparative study was performed between Ti/Pt and TiO2/Pt bottom electrodes. The results indicate that the use of a highly oriented {100} rutile phase TiO2 led to highly textured {111} Pt which in turn improved both the PTO and PZT orientations. PZT (52/48) and (45/55) thin films with and without PTO seed layers were deposited and examined via x-ray diffraction (XRD) methods as a function of annealing temperature. The seed layer provides significant improvement in the {100} orientation generally, and in the {001} subset of planes specifically, while suppressing the {111} orientation of the PZT. Improvements in the Lotgering factor (f) were observed from an existing Ti/Pt/PZT process (f = 0.66) to samples using the PTO seed layer deposited onto the improved Pt electrodes, TiO2/Pt/PTO/PZT (f = 0.96).

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Articles
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Journal of Materials Research , Volume 28 , Issue 14 , 28 July 2013 , pp. 1920 - 1931
Copyright
Copyright © Materials Research Society 2013 

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